公开(公告)号：US08887650B2

公开(公告)日：2014-11-18

申请号：US13966921

申请日：2013-08-14

Applicant: Soitec

Inventor： Chantal Arena ,  Christiaan Werkhoven

IPC: C30B23/00 ,  C30B28/06 ,  C30B25/14 ,  C23C16/30 ,  C23C16/44 ,  C23C16/48 ,  C23C16/54 ,  C30B29/40 ,  H01L21/02

CPC classification number: C30B25/14 ,  C23C16/303 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/481 ,  C23C16/54 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T117/10 ,  Y10T117/1008

Abstract: The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.

Abstract translation: 本发明涉及为生产III-N（氮）化合物半导体晶片而专门用于生产GaN晶片的方法和装置。 具体地说，这些方法涉及基本上防止在化学气相沉积（CVD）反应器内的隔离阀装置上形成不需要的材料。 特别地，本发明提供了用于限制用于系统中的隔离阀上的GaCl 3和反应副产物的沉积/冷凝的装置和方法，以及通过使一定量的气态反应形成单晶III-V族半导体材料的方法 III族前体作为一种反应物，一定量的气态V族组分作为反应室中的另一反应物。

公开(公告)号：US20130199441A1

公开(公告)日：2013-08-08

申请号：US13828585

申请日：2013-03-14

Applicant: SOITEC

Inventor： Chantal Arena ,  Ronald Thomas Bertram, JR. ,  Ed Lindow ,  Christiaan Werkhoven

IPC: C30B25/14

CPC classification number: C30B25/14 ,  C30B25/10 ,  C30B29/40

Abstract: The present invention provides improved gas injectors for use with CVD (chemical vapour deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates.

Abstract translation: 本发明提供了用于CVD（化学气相沉积）系统的改进的气体注入器，其在注入CVD腔室之前对气体进行热化。 所提供的喷射器构造成通过加热区增加气流时间，并且包括延长加热区中的气体驻留时间的导气导管。 所提供的注射器还具有尺寸，形状和布置成以选定的流动模式注入气体的出口端口。 本发明还提供了使用所提供的热化气体喷射器的CVD系统。 本发明特别适用于大量制造GaN衬底。

公开(公告)号：US20130104802A1

公开(公告)日：2013-05-02

申请号：US13680241

申请日：2012-11-19

Applicant: Soitec

Inventor： Chantal Arena ,  Christiaan Werkhoven

IPC: C30B25/10

CPC classification number: C30B25/10 ,  C23C16/303 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45593 ,  C30B25/14 ,  C30B29/406 ,  C30B35/00 ,  H01L21/0254 ,  H01L21/0262

Abstract: A system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The system includes sources of the reactants, one of which is a gaseous Group III precursor having one or more gaseous gallium precursors and another of which is a gaseous Group V component, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their monomer forms.

Abstract translation: 一种用于外延沉积包括镓的III-V族III族半导体材料的系统。 该系统包括反应物的源，其中之一是具有一种或多种气态镓前体的气态III族前体，另一种是气态V族组分，其中反应物结合沉积III-V族半导体材料 以及一个或多个加热结构，用于在反应温度之前加热气态III族前体，以将这些前体的基本上所有的二聚体，三聚体或其它分子变体分解为它们的单体形式。

公开(公告)号：US09481943B2

公开(公告)日：2016-11-01

申请号：US13680241

申请日：2012-11-19

Applicant: Soitec

Inventor： Chantal Arena ,  Christiaan Werkhoven

IPC: C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  C30B25/10 ,  C30B29/40 ,  C30B35/00 ,  H01L21/02 ,  C30B25/14

CPC classification number: C30B25/10 ,  C23C16/303 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45593 ,  C30B25/14 ,  C30B29/406 ,  C30B35/00 ,  H01L21/0254 ,  H01L21/0262

Abstract: A system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The system includes sources of the reactants, one of which is a gaseous Group III precursor having one or more gaseous gallium precursors and another of which is a gaseous Group V component, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their monomer forms.

Abstract translation: 一种用于外延沉积包括镓的III-V族III族半导体材料的系统。 该系统包括反应物的源，其中之一是具有一种或多种气态镓前体的气态III族前体，另一种是气态V族组分，其中反应物结合沉积III-V族半导体材料 以及一个或多个加热结构，用于在反应温度之前加热气态III族前体，以将这些前体的基本上所有的二聚体，三聚体或其它分子变体分解为它们的单体形式。

公开(公告)号：US09038565B2

公开(公告)日：2015-05-26

申请号：US14055281

申请日：2013-10-16

Applicant: Soitec

Inventor： Chantal Arena ,  Christiaan Werkhoven

IPC: B05C11/00 ,  C23C16/00 ,  C30B25/14 ,  C23C16/44 ,  C30B29/40 ,  C30B25/08 ,  C30B25/16

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C30B25/08 ,  C30B25/165 ,  C30B29/40 ,  C30B29/403

Abstract: Systems for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment is optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material.

Abstract translation: 用于持续，大批量生产适用于制造光学和电子部件的III-V族化合物半导体材料的系统，用作外延沉积的基板或晶片。 该设备被优化用于生产III-N（氮）化合物半导体晶片，并专门用于生产GaN晶片。 该方法包括将一定量的作为一种反应物的气态III族前体与一定量的气态V族组分作为反应室中的另一反应物反应以形成半导体材料; 去除废气，包括未反应的III族前体，未反应的V族组分和反应副产物; 并将废气加热到足以减少其冷凝的温度，并且增强半导体材料的制造。 有利地，排气被加热以充分避免冷凝，以促进半导体材料的持续高容量制造。

公开(公告)号：US09481944B2

公开(公告)日：2016-11-01

申请号：US13828585

申请日：2013-03-14

Applicant: SOITEC

Inventor： Chantal Arena ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow ,  Christiaan Werkhoven

IPC: C30B25/14 ,  C30B25/10 ,  C30B29/40

CPC classification number: C30B25/14 ,  C30B25/10 ,  C30B29/40

Abstract: The present invention provides improved gas injectors for use with CVD (chemical vapor deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high-volume manufacturing of GaN substrates.

Abstract translation: 本发明提供了用于CVD（化学气相沉积）系统的改进的气体注入器，其在注入CVD腔室之前对气体进行热化。 所提供的喷射器构造成通过加热区增加气流时间，并且包括延长加热区中的气体驻留时间的导气导管。 所提供的注射器还具有尺寸，形状和布置成以选定的流动模式注入气体的出口端口。 本发明还提供了使用所提供的热化气体喷射器的CVD系统。 本发明特别适用于高容量制造GaN衬底。