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US09484526B2 Magnetic memory device and method for forming the same 有权
磁记忆装置及其形成方法

Magnetic memory device and method for forming the same
摘要：
Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a magnetic tunnel junction pattern located on a substrate and including magnetic patterns and a tunnel barrier pattern located between the magnetic patterns, and a first crystallinity conserving pattern located on the magnetic tunnel junction pattern and having a higher crystallization temperature than the magnetic patterns. The first crystallinity conserving pattern is amorphous.
摘要（中）：

提供一种磁存储器件及其形成方法。 磁存储器件包括位于衬底上的磁性隧道结图案，其包括磁性图案和位于磁性图案之间的隧道势垒图案，以及位于磁性隧道结图案上的第一结晶保存图案，并且具有比 磁性图案。 第一个结晶保存图案是无定形的。

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