Invention Grant
US09508719B2 Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same
有权
Fin场效应晶体管（FinFET）器件具有受控的端到端临界尺寸及其形成方法
- Patent Title: Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same
- Patent Title (中): Fin场效应晶体管（FinFET）器件具有受控的端到端临界尺寸及其形成方法
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Application No.: US14554682Application Date: 2014-11-26
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Publication No.: US09508719B2Publication Date: 2016-11-29
- Inventor: Chang-Yin Chen , Tung-Wen Cheng , Che-Cheng Chang , Chun-Lung Ni , Jr-Jung Lin , Chih-Han Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L27/088 ; H01L29/06 ; H01L29/51 ; H01L29/49 ; H01L21/8238 ; H01L21/8234 ; H01L21/02 ; H01L21/311 ; H01L21/033 ; H01L21/3213
Abstract:
A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure is provided. The FinFET device structure includes a substrate and a first fin structure and a second fin structure extending above the substrate. The FinFET device structure also includes a first transistor formed on the first fin structure and a second transistor formed on the second fin structure. The FinFET device structure further includes an inter-layer dielectric (ILD) structure formed in an end-to-end gap between the first transistor and the second transistor, and the end-to-end gap has a width in a range from about 20 nm to about 40 nm.
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