公开(公告)号：US09508719B2

公开(公告)日：2016-11-29

申请号：US14554682

申请日：2014-11-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chang-Yin Chen ,  Tung-Wen Cheng ,  Che-Cheng Chang ,  Chun-Lung Ni ,  Jr-Jung Lin ,  Chih-Han Lin

IPC: H01L27/092 ,  H01L27/088 ,  H01L29/06 ,  H01L29/51 ,  H01L29/49 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/311 ,  H01L21/033 ,  H01L21/3213

CPC classification number: H01L21/0338 ,  H01L21/0206 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure is provided. The FinFET device structure includes a substrate and a first fin structure and a second fin structure extending above the substrate. The FinFET device structure also includes a first transistor formed on the first fin structure and a second transistor formed on the second fin structure. The FinFET device structure further includes an inter-layer dielectric (ILD) structure formed in an end-to-end gap between the first transistor and the second transistor, and the end-to-end gap has a width in a range from about 20 nm to about 40 nm.

Abstract translation: 提供了一种用于形成FinFET器件结构的鳍式场效应晶体管（FinFET）器件结构和方法。 FinFET器件结构包括衬底和在衬底上方延伸的第一鳍结构和第二鳍结构。 FinFET器件结构还包括形成在第一鳍结构上的第一晶体管和形成在第二鳍结构上的第二晶体管。 FinFET器件结构还包括形成在第一晶体管和第二晶体管之间的端到端间隙中的层间电介质（ILD）结构，并且端对端间隙具有在约20° nm至约40nm。