发明授权
- 专利标题: Flexible high-voltage thin film transistors
- 专利标题(中): 灵活的高压薄膜晶体管
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申请号: US14380270申请日: 2013-02-22
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公开(公告)号: US09525071B2公开(公告)日: 2016-12-20
- 发明人: Melissa Alyson Smith , Akintunde I. Akinwande
- 申请人: Melissa Alyson Smith , Akintunde I. Akinwande
- 申请人地址: US MA Cambridge
- 专利权人: Massachusetts Institute of Technology
- 当前专利权人: Massachusetts Institute of Technology
- 当前专利权人地址: US MA Cambridge
- 代理机构: Wolf, Greenfield & Sacks, P.C.
- 国际申请: PCT/US2013/027318 WO 20130222
- 国际公布: WO2013/126698 WO 20130829
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L29/10 ; H01L29/76 ; H01L29/40 ; H01L29/786 ; H01L51/10 ; B81B3/00 ; H01L29/49 ; H01L29/51 ; H01L51/00 ; H01L51/05
摘要:
A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.
公开/授权文献
- US20150001539A1 FLEXIBLE HIGH-VOLTAGE THIN FILM TRANSISTORS 公开/授权日:2015-01-01