公开(公告)号：US09525071B2

公开(公告)日：2016-12-20

申请号：US14380270

申请日：2013-02-22

申请人： Melissa Alyson Smith ,  Akintunde I. Akinwande

发明人： Melissa Alyson Smith ,  Akintunde I. Akinwande

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L29/76 ,  H01L29/40 ,  H01L29/786 ,  H01L51/10 ,  B81B3/00 ,  H01L29/49 ,  H01L29/51 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L29/78663 ,  B81B3/0086 ,  B81B2207/015 ,  H01L29/4908 ,  H01L29/51 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0097 ,  H01L51/0533 ,  H01L51/10 ,  Y02E10/549

摘要： A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.

摘要翻译： 柔性高压薄膜晶体管包括栅电极，源电极，漏电极，电介质层和柔性半导体层。 柔性半导体层用作晶体管的沟道，并与源电极和漏电极电连通。 漏电极与栅电极横向偏移。 电介质层相对于晶体管的其他元件配置和布置，使得晶体管稳定可操作以便利用相对小的控制栅极电压来切换相对高的漏极电压。

公开(公告)号：US20150001539A1

公开(公告)日：2015-01-01

申请号：US14380270

申请日：2013-02-22

申请人： Melissa Alyson Smith ,  Akintunde I. Akinwande

发明人： Melissa Alyson Smith ,  Akintunde I. Akinwande

IPC分类号： H01L29/786 ,  H01L29/51 ,  B81B3/00 ,  H01L29/49

CPC分类号： H01L29/78663 ,  B81B3/0086 ,  B81B2207/015 ,  H01L29/4908 ,  H01L29/51 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0097 ,  H01L51/0533 ,  H01L51/10 ,  Y02E10/549

摘要： A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.

摘要翻译： 柔性高压薄膜晶体管包括栅电极，源电极，漏电极，电介质层和柔性半导体层。 柔性半导体层用作晶体管的沟道，并与源电极和漏电极电连通。 漏电极与栅电极横向偏移。 电介质层相对于晶体管的其他元件配置和布置，使得晶体管稳定可操作以便利用相对小的控制栅极电压来切换相对高的漏极电压。