Invention Grant
- Patent Title: Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions
- Patent Title (中): 通过选择性化学反应在小区域上形成材料层，包括限制相邻区域上的层的磨蚀
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Application No.: US14909736Application Date: 2013-09-27
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Publication No.: US09530733B2Publication Date: 2016-12-27
- Inventor: Robert L. Bristol , James M. Blackwell , Scott B. Clendenning , Florian Gstrein , Eungnak Han , Grant M. Kloster , Jeanette M. Roberts , Patricio E. Romero , Rami Hourani
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2013/062456 WO 20130927
- International Announcement: WO2015/047345 WO 20150402
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L23/528 ; H01L21/32 ; H01L21/768 ; H01L21/3105 ; H01L21/311 ; H01L21/3205 ; H01L23/522 ; H01L23/532 ; H01L21/321
Abstract:
A method of an aspect includes forming a first thicker layer of a first material over a first region having a first surface material by separately forming each of a first plurality of thinner layers by selective chemical reaction. The method also includes limiting encroachment of each of the first plurality of thinner layers over a second region that is adjacent to the first region. A second thicker layer of a second material is formed over the second region having a second surface material that is different than the first surface material.
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