Invention Grant
- Patent Title: Semiconductor device having metal gate and manufacturing method thereof
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Application No.: US14811814Application Date: 2015-07-28
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Publication No.: US09530862B2Publication Date: 2016-12-27
- Inventor: Po-Chao Tsao , Chien-Ting Lin , Chien-Ming Lai , Chi-Mao Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L29/66 ; H01L21/28 ; H01L21/321 ; H01L29/78 ; H01L29/423 ; H01L29/51 ; H01L27/092 ; H01L29/49 ; H01L21/8238
Abstract:
A manufacturing method of semiconductor devices having metal gate includes following steps. A substrate having a first semiconductor device and a second semiconductor device formed thereon is provided. The first semiconductor device includes a first gate trench and the second semiconductor device includes a second gate trench. A first work function metal layer is formed in the first gate trench and the second gate trench. A portion of the first work function metal layer is removed from the second gate trench. A second work function metal layer is formed in the first gate trench and the second gate trench. The second work function metal layer and the first work function metal layer include the same metal material. A third work function metal layer and a gap-filling metal layer are sequentially formed in the first gate trench and the second gate trench.
Public/Granted literature
- US20150332976A1 SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-11-19
Information query
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