发明授权
US09536926B1 Magnetic tunnel junction based anti-fuses with cascoded transistors
有权
具有级联晶体管的基于磁隧道结的防熔丝
- 专利标题： Magnetic tunnel junction based anti-fuses with cascoded transistors
- 专利标题（中）： 具有级联晶体管的基于磁隧道结的防熔丝
-
申请号： US14978013申请日： 2015-12-22
-
公开(公告)号： US09536926B1公开(公告)日： 2017-01-03
- 发明人: Anthony J. Annunziata , John K. Debrosse , Chandrasekharan Kothandaraman
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; H01L27/22 ; H01L23/525 ; H01L43/02 ; H01L43/08 ; H01L43/12
摘要：
Magnetic tunnel junction antifuse devices are protected from degradation caused by programming voltage drop across the gates of unselected magnetic tunnel junction antifuses by connecting said magnetic tunnel junction serially with a first field effect transistor and a second field effect transistor, the first field effect transistor having its gate connected to a positive supply voltage while the gate of the second field effect transistor is switchably connected to a programming voltage.
信息查询
