发明授权
- 专利标题： Method of manufacturing a semiconductor device using semiconductor measurement system
- 专利标题（中）： 使用半导体测量系统制造半导体器件的方法
-
申请号： US14794813申请日： 2015-07-09
-
公开(公告)号： US09583402B2公开(公告)日： 2017-02-28
- 发明人: Sung Yoon Ryu , Wooseok Ko , Souk Kim , Yusin Yang , Sangkil Lee , Chungsam Jun , Kwanwoo Ryu
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构： Muir Patent Law, PLLC
- 优先权： KR10-2014-0095944 20140728
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L21/67
摘要：
A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.
公开/授权文献
信息查询
IPC分类:
