Method of inspecting semiconductor device and method of fabricating semiconductor device using the same
    1.
    发明授权
    Method of inspecting semiconductor device and method of fabricating semiconductor device using the same 有权
    检查半导体器件的方法和使用其制造半导体器件的方法

    公开(公告)号:US09466537B2

    公开(公告)日:2016-10-11

    申请号:US14988991

    申请日:2016-01-06

    CPC classification number: H01L22/12 H01L27/11565 H01L27/11582

    Abstract: A method of inspecting a semiconductor device includes providing a substrate, on which a mold layer with a plurality of mold openings is provided, milling the mold layer in a direction inclined at a predetermined angle with respect to a direction normal to a top surface of the substrate, such that an inclined cutting surface exposing milled mold openings is formed, the milled mold openings including first milling openings along a first column extending in a first direction and having different heights, obtaining image data of the cutting surface, the image data including first contour images of the first milling openings, and obtaining a first process parameter, which represents an extent of bending of the mold openings according to a distance from a top surface of the substrate, using positions of center points of the first contour images.

    Abstract translation: 一种检查半导体器件的方法包括提供一个衬底,在其上提供具有多个模具开口的模具层,在相对于垂直于该顶部表面的方向倾斜预定角度的方向上铣削模具层 基板,使得形成露出铣削模具开口的倾斜切割表面,所述铣削模具开口包括沿着第一方向延伸并具有不同高度的第一列的第一铣削开口,获得切割表面的图像数据,所述图像数据包括第一 并且使用第一轮廓图像的中心点的位置获得第一加工参数,该第一加工参数代表与基材顶表面距离的距离的模具开口的弯曲程度。

    Method of manufacturing a semiconductor device using semiconductor measurement system
    2.
    发明授权
    Method of manufacturing a semiconductor device using semiconductor measurement system 有权
    使用半导体测量系统制造半导体器件的方法

    公开(公告)号:US09583402B2

    公开(公告)日:2017-02-28

    申请号:US14794813

    申请日:2015-07-09

    CPC classification number: H01L22/12 H01L21/67173 H01L22/20

    Abstract: A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.

    Abstract translation: 一种方法包括将衬底加载到感测室中; 同时衬底在感测室中,对衬底进行光谱分析; 在所述感测室和耦合到所述感测室的处理室之间传送所述衬底; 在所述处理室中处理所述衬底以在所述衬底上形成至少第一层和/或图案; 并且至少基于光谱分析,确定是否满足形成第一层和/或图案所引起的参数。

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