Invention Grant
US09589674B2 Method of operating memory device and methods of writing and reading data in memory device
有权
操作存储器件的方法和在存储器件中写入和读取数据的方法
- Patent Title: Method of operating memory device and methods of writing and reading data in memory device
- Patent Title (中): 操作存储器件的方法和在存储器件中写入和读取数据的方法
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Application No.: US14305095Application Date: 2014-06-16
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Publication No.: US09589674B2Publication Date: 2017-03-07
- Inventor: Jong-Pil Son , Young-Soo Sohn , Uk-Song Kang , Chul-Woo Park , Jung-Hwan Choi , Won-Il Bae , Kyo-Min Sohn
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0106808 20130905
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/52 ; G06F11/10 ; G11C29/04

Abstract:
In a method of operating a memory device, a command and a first address from a memory controller are received. A read code word including a first set of data corresponding to the first address, a second set of data corresponding to a second address and a read parity data is read from a memory cell array of the memory device. Corrected data are generated by operating error checking and correction (ECC) using an ECC circuit based on the read cord word.
Public/Granted literature
- US20150067448A1 METHOD OF OPERATING MEMORY DEVICE AND METHODS OF WRITING AND READING DATA IN MEMORY DEVICE Public/Granted day:2015-03-05
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