Invention Grant
- Patent Title: Phase change memory structure to reduce leakage from the heating element to the surrounding material
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Application No.: US14471082Application Date: 2014-08-28
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Publication No.: US09660188B2Publication Date: 2017-05-23
- Inventor: Po-ken Lin , Chang-Ming Wu , Chern-Yow Hsu , Shih-Chang Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L47/00 ; H01L45/00 ; H01L27/24
Abstract:
A phase change memory (PCM) cell with a heating element electrically isolated from laterally surrounding regions of the PCM cell by a cavity is provided. A dielectric region is arranged between first and second conductors. A heating plug is arranged within a hole extending through the dielectric region to the first conductor. The heating plug includes a heating element running along sidewalls of the hole, and includes a sidewall structure including a cavity arranged between the heating element and the sidewalls. A phase change element is in thermal communication with the heating plug and arranged between the heating plug and the second conductor. Also provide is a method for manufacturing the PCM cell.
Public/Granted literature
- US20160064656A1 Phase Change Memory Structure to Reduce Leakage from the Heating Element to the Surrounding Material Public/Granted day:2016-03-03
Information query
IPC分类:
