Invention Grant
- Patent Title: Semiconductor structure in which film including germanium oxide is provided on germanium layer, and method for manufacturing semiconductor structure
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Application No.: US14914310Application Date: 2014-06-06
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Publication No.: US09722026B2Publication Date: 2017-08-01
- Inventor: Akira Toriumi , Toshiyuki Tabata , Choong Hyun Lee , Tomonori Nishimura , Cimang Lu
- Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Applicant Address: JP Kawaguchi-Shi
- Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee Address: JP Kawaguchi-Shi
- Priority: JP2013-179912 20130830; JP2013-195887 20130920
- International Application: PCT/JP2014/065144 WO 20140606
- International Announcement: WO2015/029535 WO 20150305
- Main IPC: H01L21/16
- IPC: H01L21/16 ; H01L21/02 ; H01L21/28 ; H01L21/324 ; H01L29/51 ; H01L29/66 ; H01L29/78 ; H01L29/16 ; C23C14/08 ; C23C14/35
Abstract:
A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 μm square area of the upper surface of the germanium layer is 0.7 nm or less.
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