公开(公告)号：US09722026B2

公开(公告)日：2017-08-01

申请号：US14914310

申请日：2014-06-06

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Toshiyuki Tabata ,  Choong Hyun Lee ,  Tomonori Nishimura ,  Cimang Lu

IPC: H01L21/16 ,  H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  C23C14/08 ,  C23C14/35

CPC classification number: H01L29/16 ,  C23C14/083 ,  C23C14/086 ,  C23C14/352 ,  H01L21/02112 ,  H01L21/02266 ,  H01L21/28255 ,  H01L21/3247 ,  H01L29/517 ,  H01L29/66477 ,  H01L29/78

Abstract: A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 μm square area of the upper surface of the germanium layer is 0.7 nm or less.