Invention Grant
- Patent Title: Method of fabricating a packaged integrated circuit with through-silicon via an inner substrate
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Application No.: US14723642Application Date: 2015-05-28
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Publication No.: US09728424B2Publication Date: 2017-08-08
- Inventor: Ji-hwang Kim , Un-byoung Kang , Cha-jea Jo , Tae-je Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP.
- Priority: KR10-2014-0085364 20140708
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/48 ; B23K31/02 ; H01L21/48 ; H01L21/56 ; H01L23/498 ; H01L23/00 ; H01L23/14
Abstract:
A method of manufacturing a semiconductor package includes forming a bonding layer on a carrier substrate, bonding an inner substrate to the carrier substrate, removing the carrier substrate, and forming a gap-filling portion by removing a portion of the bonding layer to expose a portion of a solder ball provided in the inner substrate. The inner substrate may be mounted on a package substrate and a semiconductor chip may be mounted on the inner substrate.
Public/Granted literature
- US20160013091A1 SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-01-14
Information query
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