Abstract:
A method of manufacturing a semiconductor package includes forming a bonding layer on a carrier substrate, bonding an inner substrate to the carrier substrate, removing the carrier substrate, and forming a gap-filling portion by removing a portion of the bonding layer to expose a portion of a solder ball provided in the inner substrate. The inner substrate may be mounted on a package substrate and a semiconductor chip may be mounted on the inner substrate.
Abstract:
An image sensor package includes an image sensor chip on a package substrate, a logic chip on the package substrate and perpendicularly overlapping the image sensor chip, and a memory chip on the package substrate and perpendicularly overlapping the image sensor chip and logic chip. The logic chip processes a pixel signal output from the image sensor chip. The memory chip is electrically connected to the image sensor chip through a conductive wire and stores at least one of the pixel signal from the image sensor chip or a pixel signal processed by the logic chip. The memory chip receives the pixel signal output from the image sensor chip through the conductive wire and receives the pixel signal processed by the logic chip through the image sensor chip and the conductive wire.
Abstract:
A method of manufacturing a semiconductor package includes forming at least two partial package chip stacks, each partial package chip stack including at least two semiconductor chips each including a plurality of through substrate vias (TSVs), and including a first mold layer surrounding side surfaces of the at least two semiconductor chips, and sequentially mounting the at least two partial package chip stacks on a package substrate in a direction vertical to a top surface of the package substrate, such that the at least two partial package chip stacks include a first partial package chip stack and a second partial package chip stack directly connected to the first partial package chip stack.
Abstract:
A method of manufacturing a semiconductor package includes forming at least two partial package chip stacks, each partial package chip stack including at least two semiconductor chips each including a plurality of through substrate vias (TSVs), and including a first mold layer surrounding side surfaces of the at least two semiconductor chips, and sequentially mounting the at least two partial package chip stacks on a package substrate in a direction vertical to a top surface of the package substrate, such that the at least two partial package chip stacks include a first partial package chip stack and a second partial package chip stack directly connected to the first partial package chip stack.
Abstract:
An image sensor package includes an image sensor chip on a package substrate, a logic chip on the package substrate and perpendicularly overlapping the image sensor chip, and a memory chip on the package substrate and perpendicularly overlapping the image sensor chip and logic chip. The logic chip processes a pixel signal output from the image sensor chip. The memory chip is electrically connected to the image sensor chip through a conductive wire and stores at least one of the pixel signal from the image sensor chip or a pixel signal processed by the logic chip. The memory chip receives the pixel signal output from the image sensor chip through the conductive wire and receives the pixel signal processed by the logic chip through the image sensor chip and the conductive wire.
Abstract:
A semiconductor package includes a first package substrate, a first semiconductor chip on the first package substrate, a plurality of first chip connection units to connect the first package substrate to the first semiconductor chip, an interposer on the first semiconductor chip, the interposer having a width greater than a width of the first semiconductor chip in a direction parallel to an upper surface of the first package substrate, and an upper filling layer including a center portion and an outer portion, the center portion being between the first semiconductor chip and the interposer, and the outer portion surrounding the center portion and having a thickness greater than a thickness of the center portion in a direction perpendicular to the upper surface of the first package substrate.
Abstract:
An image sensor including: a semiconductor substrate having a first region and a second region; an isolation region filling an isolation trench that partially penetrates the semiconductor substrate; a plurality of photoelectric conversion regions defined by the isolation region and forming a first hexagonal array on a plane that is parallel to a surface of the semiconductor substrate; and a plurality of microlenses respectively corresponding to the plurality of photoelectric conversion regions, and forming a second hexagonal array on the plane that is parallel to the surface of the semiconductor substrate.
Abstract:
An image sensor package includes an image sensor chip on a package substrate, a logic chip on the package substrate and perpendicularly overlapping the image sensor chip, and a memory chip on the package substrate and perpendicularly overlapping the image sensor chip and logic chip. The logic chip processes a pixel signal output from the image sensor chip. The memory chip is electrically connected to the image sensor chip through a conductive wire and stores at least one of the pixel signal from the image sensor chip or a pixel signal processed by the logic chip. The memory chip receives the pixel signal output from the image sensor chip through the conductive wire and receives the pixel signal processed by the logic chip through the image sensor chip and the conductive wire.
Abstract:
A semiconductor package includes: a package base substrate; at least one first semiconductor chip disposed on the package base substrate; a first molding member disposed at a same level as the at least one first semiconductor chip and that does not cover an upper surface of the at least one first semiconductor chip; at least one second semiconductor chip stacked on the at least one first semiconductor chip so as to extend over the at least one first semiconductor chip and the first molding member, wherein the at least one first semiconductor chip and at least part of the first molding member are disposed between the package base substrate and the at least one second semiconductor chip; and a second molding member disposed at a same level as the at least one second semiconductor chip.
Abstract:
A method of manufacturing a semiconductor package includes forming a bonding layer on a carrier substrate, bonding an inner substrate to the carrier substrate, removing the carrier substrate, and forming a gap-filling portion by removing a portion of the bonding layer to expose a portion of a solder ball provided in the inner substrate. The inner substrate may be mounted on a package substrate and a semiconductor chip may be mounted on the inner substrate.