公开(公告)号：US20150221517A1

公开(公告)日：2015-08-06

申请号：US14613822

申请日：2015-02-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-mi Kim ,  Un-byoung Kang ,  Tae-je Cho ,  Jung-seok Ahn

IPC: H01L21/306 ,  H01L21/768 ,  H01L21/304 ,  H01L21/78

CPC classification number: H01L21/304 ,  C09J7/22 ,  C09J7/30 ,  C09J2201/36 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2463/00 ,  H01L21/30604 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L21/78 ,  H01L24/03 ,  H01L24/06 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/13023 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16238 ,  H01L2224/16245 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device capable of thinning a semiconductor chip can be performed while preventing the semiconductor chip from being damaged. A method of manufacturing a semiconductor device includes: preparing a semiconductor substrate including a plurality of semiconductor chips, attaching the semiconductor substrate to a support substrate with an adhesive support film, removing an edge region of the semiconductor substrate together with a portion of the adhesive support film between the edge region of the semiconductor substrate and the support substrate and, thereafter, polishing the semiconductor substrate to thin the semiconductor substrate.

Abstract translation: 可以在防止半导体芯片损坏的同时进行制造能够使半导体芯片变薄的半导体器件的制造方法。 一种制造半导体器件的方法包括：制备包括多个半导体芯片的半导体衬底，用粘合剂支撑膜将半导体衬底附着到支撑衬底上，与粘合剂支撑体的一部分一起去除半导体衬底的边缘区域 在半导体衬底的边缘区域和支撑衬底之间形成薄膜，然后对半导体衬底进行抛光以使半导体衬底变薄。

公开(公告)号：US11227855B2

公开(公告)日：2022-01-18

申请号：US16407429

申请日：2019-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jang-woo Lee ,  Un-byoung Kang ,  Ji-hwang Kim ,  Jong-bo Shim ,  Young-kun Jee

IPC: H01L21/00 ,  H01L25/065 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor package includes a first package substrate, a first semiconductor chip on the first package substrate, a plurality of first chip connection units to connect the first package substrate to the first semiconductor chip, an interposer on the first semiconductor chip, the interposer having a width greater than a width of the first semiconductor chip in a direction parallel to an upper surface of the first package substrate, and an upper filling layer including a center portion and an outer portion, the center portion being between the first semiconductor chip and the interposer, and the outer portion surrounding the center portion and having a thickness greater than a thickness of the center portion in a direction perpendicular to the upper surface of the first package substrate.

公开(公告)号：US09376541B2

公开(公告)日：2016-06-28

申请号：US14288997

申请日：2014-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Un-byoung Kang ,  Kyung-wook Paik ,  Tae-Je Cho ,  Young-kun Jee ,  Sun-kyoung Seo ,  Yong-won Choi ,  Ji-won Shin

IPC: H01L23/29 ,  C08K3/08 ,  H01L25/065 ,  H01L23/00

CPC classification number: C08K3/08 ,  C08K2003/0893 ,  C08K2201/011 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16503 ,  H01L2224/17181 ,  H01L2224/2732 ,  H01L2224/27436 ,  H01L2224/2929 ,  H01L2224/29318 ,  H01L2224/32505 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/3651 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/8211

Abstract: A non-conductive material layer, selected from a non-conductive film and a non-conductive polymer paste, and containing a dispersion of zinc (Zn) particles is disclosed, together with semiconductor packages including the non-conductive material layer. The non-conductive material layer contains zinc (Zn) particles having an average particle diameter of about 1 nm to about 200 nm in a non-conductive polymer base material of a film type, and a semiconductor package includes the non-conductive film. By using the non-conductive film and/or the non-conductive paste containing the zinc dispersion, e a semiconductor package having excellent electric connection properties and high reliability may be manufactured through simple processes at low manufacturing costs.

Abstract translation: 公开了一种选自非导电膜和非导电聚合物浆料并含有锌（Zn）颗粒的分散体的非导电材料层以及包括非导电材料层的半导体封装。 非导电材料层在薄膜型非导电性聚合物基材中含有平均粒径为约1nm〜约200nm的锌（Zn）颗粒，半导体封装包括非导电膜。 通过使用含有锌分散体的非导电性膜和/或非导电性糊剂，可以以低制造成本通过简单的工艺制造具有优异的电连接性能和高可靠性的半导体封装。

公开(公告)号：US20160013091A1

公开(公告)日：2016-01-14

申请号：US14723642

申请日：2015-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-hwang Kim ,  Un-byoung Kang ,  Cha-jea Jo ,  Tae-je Cho

IPC: H01L21/768 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L21/486 ,  H01L21/563 ,  H01L23/147 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/17 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A method of manufacturing a semiconductor package includes forming a bonding layer on a carrier substrate, bonding an inner substrate to the carrier substrate, removing the carrier substrate, and forming a gap-filling portion by removing a portion of the bonding layer to expose a portion of a solder ball provided in the inner substrate. The inner substrate may be mounted on a package substrate and a semiconductor chip may be mounted on the inner substrate.

Abstract translation: 一种半导体封装的制造方法，其特征在于，在载体基板上形成接合层，将内部基板与载体基板接合，除去载体基板，通过除去接合层的一部分而形成间隙填充部， 设置在内部基板中的焊球。 内部基板可以安装在封装基板上，半导体芯片可以安装在内部基板上。

公开(公告)号：US09761477B2

公开(公告)日：2017-09-12

申请号：US15286801

申请日：2016-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun-ho Chang ,  Un-byoung Kang ,  Tae-je Cho

IPC: H01L21/78 ,  H01L21/683 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/36 ,  H01L21/768 ,  H01L21/304 ,  H01L23/544

CPC classification number: H01L21/6836 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/36 ,  H01L23/544 ,  H01L24/02 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/95 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/5446 ,  H01L2224/02331 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/11002 ,  H01L2224/11009 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/11849 ,  H01L2224/13026 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13562 ,  H01L2224/13611 ,  H01L2224/13613 ,  H01L2224/1362 ,  H01L2224/13639 ,  H01L2224/13647 ,  H01L2224/13664 ,  H01L2224/14519 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/17181 ,  H01L2224/73253 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/18161

Abstract: Methods of fabricating semiconductor packages are provided. One of the methods includes forming a protection layer including metal on a first surface of a substrate to cover a semiconductor device disposed on the first surface of the substrate, attaching a support substrate to the protection layer by using an adhesive member, processing a second surface of the substrate opposite to the protection layer to remove a part of the substrate, and detaching the support substrate from the substrate.

公开(公告)号：US09728424B2

公开(公告)日：2017-08-08

申请号：US14723642

申请日：2015-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-hwang Kim ,  Un-byoung Kang ,  Cha-jea Jo ,  Tae-je Cho

IPC: H01L21/00 ,  H01L23/48 ,  B23K31/02 ,  H01L21/48 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H01L23/14

CPC classification number: H01L21/486 ,  H01L21/563 ,  H01L23/147 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/17 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A method of manufacturing a semiconductor package includes forming a bonding layer on a carrier substrate, bonding an inner substrate to the carrier substrate, removing the carrier substrate, and forming a gap-filling portion by removing a portion of the bonding layer to expose a portion of a solder ball provided in the inner substrate. The inner substrate may be mounted on a package substrate and a semiconductor chip may be mounted on the inner substrate.

公开(公告)号：US20170025302A1

公开(公告)日：2017-01-26

申请号：US15286801

申请日：2016-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun-ho Chang ,  Un-byoung Kang ,  Tae-je Cho

IPC: H01L21/683 ,  H01L25/065 ,  H01L23/00 ,  H01L21/304 ,  H01L21/78 ,  H01L23/544 ,  H01L25/00 ,  H01L21/768

CPC classification number: H01L21/6836 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/36 ,  H01L23/544 ,  H01L24/02 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/95 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/5446 ,  H01L2224/02331 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/11002 ,  H01L2224/11009 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/11849 ,  H01L2224/13026 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13562 ,  H01L2224/13611 ,  H01L2224/13613 ,  H01L2224/1362 ,  H01L2224/13639 ,  H01L2224/13647 ,  H01L2224/13664 ,  H01L2224/14519 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/17181 ,  H01L2224/73253 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/18161

Abstract: Methods of fabricating semiconductor packages are provided. One of the methods includes forming a protection layer including metal on a first surface of a substrate to cover a semiconductor device disposed on the first surface of the substrate, attaching a support substrate to the protection layer by using an adhesive member, processing a second surface of the substrate opposite to the protection layer to remove a part of the substrate, and detaching the support substrate from the substrate.

Abstract translation: 提供制造半导体封装的方法。 其中一种方法包括在衬底的第一表面上形成包括金属的保护层，以覆盖设置在衬底的第一表面上的半导体器件，通过使用粘合构件将支撑衬底附着到保护层上，处理第二表面 的衬底相对于保护层去除衬底的一部分，以及从衬底分离支撑衬底。

公开(公告)号：US20150102485A1

公开(公告)日：2015-04-16

申请号：US14288997

申请日：2014-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Un-byoung Kang ,  Kyung-wook Paik ,  Tae-Je Cho ,  Young-kun Jee ,  Sun-kyoung Seo ,  Yong-won Choi ,  Ji-won Shin

IPC: H01L23/29 ,  H01L23/538 ,  C08K3/08 ,  H01L23/50

CPC classification number: C08K3/08 ,  C08K2003/0893 ,  C08K2201/011 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16503 ,  H01L2224/17181 ,  H01L2224/2732 ,  H01L2224/27436 ,  H01L2224/2929 ,  H01L2224/29318 ,  H01L2224/32505 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/3651 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/8211

Abstract: A non-conductive material layer, selected from a non-conductive film and a non-conductive polymer paste, and containing a dispersion of zinc (Zn) particles is disclosed, together with semiconductor packages including the non-conductive material layer. The non-conductive material layer contains zinc (Zn) particles having an average particle diameter of about 1 nm to about 200 nm in a non-conductive polymer base material of a film type, and a semiconductor package includes the non-conductive film. By using the non-conductive film and/or the non-conductive paste containing the zinc dispersion, e a semiconductor package having excellent electric connection properties and high reliability may be manufactured through simple processes at low manufacturing costs.

Abstract translation: 公开了一种选自非导电膜和非导电聚合物浆料并含有锌（Zn）颗粒的分散体的非导电材料层以及包括非导电材料层的半导体封装。 非导电材料层在薄膜型非导电性聚合物基材中含有平均粒径为约1nm〜约200nm的锌（Zn）颗粒，半导体封装包括非导电膜。 通过使用含有锌分散体的非导电性膜和/或非导电性糊剂，可以以低制造成本通过简单的工艺制造具有优异的电连接性能和高可靠性的半导体封装。