Invention Grant
- Patent Title: Methods for forming fin structures
-
Application No.: US14830245Application Date: 2015-08-19
-
Publication No.: US09735063B2Publication Date: 2017-08-15
- Inventor: Chanro Park , Min Gyu Sung , Hoon Kim , Ruilong Xie
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley and Mesiti PC
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/02 ; H01L21/3105 ; H01L29/66 ; H01L21/311
Abstract:
A method includes providing a substrate having a first and a second plurality of fins with a first at least one dielectric material disposed thereon, removing upper portions of the first dielectric material to expose upper portions of the first and the second plurality of fins, removing the first dielectric material from the lower portions of the second plurality of fins to expose lower portions of the second plurality of fins, depositing a second at least one dielectric material on at least the upper and the lower exposed portions of the second plurality of fins and on the upper exposed portions of first plurality of fins, removing the second dielectric material to expose upper portions of the first and the second plurality of fins, and wherein the first dielectric material is different from the second dielectric material. The resulting structure may be operable for use as nFETs and pFETs.
Public/Granted literature
- US20170053836A1 METHODS FOR FORMING FIN STRUCTURES Public/Granted day:2017-02-23
Information query
IPC分类:
