An SGT is produced by forming a first insulating film around a fin-shaped semiconductor layer, forming a pillar-shaped semiconductor layer in an upper portion of the fin-shaped layer, forming a second insulating film, a polysilicon gate electrode covering the second insulating film, and a polysilicon gate line, forming a diffusion layer in an upper portion of the fin-shaped layer and a lower portion of the pillar-shaped layer, forming a metal-semiconductor compound in an upper portion of the diffusion layer in the fin-shaped layer, depositing an interlayer insulating film, exposing and etching the polysilicon gate electrode and gate line, depositing a first metal, forming a metal gate electrode and a metal gate line, and forming a third metal sidewall on an upper side wall of the pillar-shaped layer. The third metal sidewall is connected to an upper surface of the pillar-shaped layer.