Invention Grant
- Patent Title: Crystals of semiconductor material having a tuned band gap energy and method for preparation thereof
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Application No.: US14500775Application Date: 2014-09-29
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Publication No.: US09771263B2Publication Date: 2017-09-26
- Inventor: Boaz Pokroy , Anastasia Brif
- Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
- Applicant Address: IL Haifa
- Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
- Current Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
- Current Assignee Address: IL Haifa
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L29/167
- IPC: H01L29/167 ; H01L29/207 ; H01L29/22 ; H01L29/227 ; H01L29/24 ; C01B19/00 ; C01B17/00 ; G01N33/58 ; G01N33/68 ; C01G21/21 ; C01G9/02 ; C01G11/02 ; C07K4/00 ; C07K9/00
Abstract:
The present invention provides a semiconductor crystal comprising a semiconductor material having a tuned band gap energy, and methods for preparation thereof. More particularly, the invention provides a semiconductor crystal comprising a semiconductor material and amino acid molecules, peptides, or a combination thereof, incorporated within the crystal lattice, wherein the amino acid molecules, peptides, or combination thereof tune the band gap energy of the semiconductor material.
Public/Granted literature
- US20150090942A1 CRYSTALS OF SEMICONDUCTOR MATERIAL HAVING A TUNED BAND GAP ENERGY AND METHOD FOR PREPARATION THEREOF Public/Granted day:2015-04-02
Information query
IPC分类:
