公开(公告)号：US09771263B2

公开(公告)日：2017-09-26

申请号：US14500775

申请日：2014-09-29

Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.

Inventor： Boaz Pokroy ,  Anastasia Brif

IPC: H01L29/167 ,  H01L29/207 ,  H01L29/22 ,  H01L29/227 ,  H01L29/24 ,  C01B19/00 ,  C01B17/00 ,  G01N33/58 ,  G01N33/68 ,  C01G21/21 ,  C01G9/02 ,  C01G11/02 ,  C07K4/00 ,  C07K9/00

CPC classification number: C01B19/007 ,  C01G9/02 ,  C01G11/02 ,  C01G21/21 ,  C01P2002/74 ,  C01P2006/40 ,  C07K4/00 ,  C07K9/00 ,  G01N33/588 ,  G01N33/68 ,  H01L29/167 ,  H01L29/207 ,  H01L29/2203 ,  H01L29/227

Abstract: The present invention provides a semiconductor crystal comprising a semiconductor material having a tuned band gap energy, and methods for preparation thereof. More particularly, the invention provides a semiconductor crystal comprising a semiconductor material and amino acid molecules, peptides, or a combination thereof, incorporated within the crystal lattice, wherein the amino acid molecules, peptides, or combination thereof tune the band gap energy of the semiconductor material.