公开(公告)号：US09771263B2

公开(公告)日：2017-09-26

申请号：US14500775

申请日：2014-09-29

Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.

Inventor： Boaz Pokroy ,  Anastasia Brif

IPC: H01L29/167 ,  H01L29/207 ,  H01L29/22 ,  H01L29/227 ,  H01L29/24 ,  C01B19/00 ,  C01B17/00 ,  G01N33/58 ,  G01N33/68 ,  C01G21/21 ,  C01G9/02 ,  C01G11/02 ,  C07K4/00 ,  C07K9/00

CPC classification number: C01B19/007 ,  C01G9/02 ,  C01G11/02 ,  C01G21/21 ,  C01P2002/74 ,  C01P2006/40 ,  C07K4/00 ,  C07K9/00 ,  G01N33/588 ,  G01N33/68 ,  H01L29/167 ,  H01L29/207 ,  H01L29/2203 ,  H01L29/227

Abstract: The present invention provides a semiconductor crystal comprising a semiconductor material having a tuned band gap energy, and methods for preparation thereof. More particularly, the invention provides a semiconductor crystal comprising a semiconductor material and amino acid molecules, peptides, or a combination thereof, incorporated within the crystal lattice, wherein the amino acid molecules, peptides, or combination thereof tune the band gap energy of the semiconductor material.

公开(公告)号：US09446949B2

公开(公告)日：2016-09-20

申请号：US13774400

申请日：2013-02-22

Applicant: Technion Research and Development Foundation Ltd.

Inventor： Boaz Pokroy ,  Shirly Borukhin

IPC: C23C14/00 ,  C23C16/01 ,  B82B3/00 ,  H01L21/02 ,  H01L21/00

CPC classification number: B82B3/0038 ,  C23C14/0005 ,  C23C16/01 ,  H01L21/02428 ,  Y10T428/24355

Abstract: The present invention provides vicinal surfaces of polycrystalline materials and a method for their preparation. The method includes the deposition of a polycrystalline material on a substrate followed by removing the material from the substrate so as to expose a vicinal surface having stepped terraces. The step of removing the material from the substrate may be preceded by annealing. The vicinal surfaces are useful for a variety of applications.

Abstract translation: 本发明提供多晶材料的连位表面及其制备方法。 该方法包括将多晶材料沉积在基底上，随后从基底上去除材料，以便露出具有梯级台阶的连续表面。 可以在退火之前从衬底去除材料的步骤。 邻位表面可用于各种应用。