Invention Grant
- Patent Title: High quality factor capacitors and methods for fabricating high quality factor capacitors
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Application No.: US15375137Application Date: 2016-12-11
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Publication No.: US09773862B2Publication Date: 2017-09-26
- Inventor: Changhan Hobie Yun , Daeik Daniel Kim , Chengjie Zuo , Jonghae Kim , Mario Francisco Velez , Donald William Kidwell, Jr. , Jon Bradley Lasiter , Kwan-Yu Lai , Jitae Kim , Ravindra Vaman Shenoy
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L49/02 ; H01L27/08 ; H01L23/48 ; H01L21/28 ; H01L21/768
Abstract:
Provided are space-efficient capacitors that have a higher quality factor than conventional designs and improve coupling of electrical energy from a through-glass via (TGV) to a dielectric. For example, provided is a TGV having a non-rectangular cross-section, where one end of the TGV is coupled to a first metal plate. A dielectric material is formed on the first metal plate. A second metal plate is formed on the dielectric material in a manner that overlaps at least a portion of the first metal plate to form at least one overlapped region of the dielectric material. At least a part of the perimeter of the overlapped region is non-planar. The overlapped region can be formed in a shape of a closed ring, in a plurality of portions of a ring shape, in substantially a quarter of a ring shape, and/or in substantially a half of a ring shape.
Public/Granted literature
- US20170125512A1 HIGH QUALITY FACTOR CAPACITORS AND METHODS FOR FABRICATING HIGH QUALITY FACTOR CAPACITORS Public/Granted day:2017-05-04
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