公开(公告)号：US09773862B2

公开(公告)日：2017-09-26

申请号：US15375137

申请日：2016-12-11

Applicant: QUALCOMM Incorporated

Inventor： Changhan Hobie Yun ,  Daeik Daniel Kim ,  Chengjie Zuo ,  Jonghae Kim ,  Mario Francisco Velez ,  Donald William Kidwell, Jr. ,  Jon Bradley Lasiter ,  Kwan-Yu Lai ,  Jitae Kim ,  Ravindra Vaman Shenoy

IPC: H01L21/4763 ,  H01L49/02 ,  H01L27/08 ,  H01L23/48 ,  H01L21/28 ,  H01L21/768

CPC classification number: H01L28/90 ,  H01G4/012 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5223 ,  H01L27/0805 ,  H01L27/12 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are space-efficient capacitors that have a higher quality factor than conventional designs and improve coupling of electrical energy from a through-glass via (TGV) to a dielectric. For example, provided is a TGV having a non-rectangular cross-section, where one end of the TGV is coupled to a first metal plate. A dielectric material is formed on the first metal plate. A second metal plate is formed on the dielectric material in a manner that overlaps at least a portion of the first metal plate to form at least one overlapped region of the dielectric material. At least a part of the perimeter of the overlapped region is non-planar. The overlapped region can be formed in a shape of a closed ring, in a plurality of portions of a ring shape, in substantially a quarter of a ring shape, and/or in substantially a half of a ring shape.

公开(公告)号：US09510454B2

公开(公告)日：2016-11-29

申请号：US14463367

申请日：2014-08-19

Applicant: QUALCOMM Incorporated

Inventor： Vidhya Ramachandran ,  Urmi Ray ,  Ravindra Vaman Shenoy ,  Kwan-Yu Lai ,  Jon Bradley Lasiter

IPC: H05K1/18 ,  H01L21/28 ,  H01L21/768 ,  H01L23/538 ,  H01L21/84 ,  H01L27/06 ,  H01L27/12 ,  H01L23/14 ,  H01L23/498 ,  H01L25/065

CPC classification number: H05K1/185 ,  H01L21/28008 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/84 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/5384 ,  H01L25/065 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/12 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H01L2924/00

Abstract: An integrated interposer between a first component and a second component includes a substrate. The substrate may have thermal and/or mechanical properties with values lying between the thermal and/or mechanical properties of the first component and the second component. Active devices are disposed on a first surface of the substrate. A contact layer is coupled to the active devices and configured to couple at least the first component and a third component to the integrated interposer. At least one through via(s) is coupled to the contact layer and extends through the substrate to a second surface of the substrate. An interconnect layer is disposed on the second surface of the substrate and coupled to the at least one through via(s). The interconnect layer is configured to couple the second component to the integrated interposer.

Abstract translation: 第一部件和第二部件之间的集成插入件包括基板。 衬底可以具有热和/或机械性能，其中值位于第一部件和第二部件的热和/或机械性能之间。 有源器件设置在衬底的第一表面上。 接触层耦合到有源器件并且被配置为将至少第一部件和第三部件耦合到集成插入器。 至少一个通孔连接到接触层并且延伸穿过衬底到衬底的第二表面。 互连层设置在衬底的第二表面上并且耦合到至少一个通孔。 互连层被配置为将第二组件耦合到集成插入器。

公开(公告)号：US09548350B2

公开(公告)日：2017-01-17

申请号：US14177072

申请日：2014-02-10

Applicant: QUALCOMM Incorporated

Inventor： Changhan Hobie Yun ,  Daeik Daniel Kim ,  Chengjie Zuo ,  Jonghae Kim ,  Mario Francisco Velez ,  Donald William Kidwell, Jr. ,  Jon Bradley Lasiter ,  Kwan-Yu Lai ,  Jitae Kim ,  Ravindra Vaman Shenoy

IPC: H01L29/00 ,  H01L49/02 ,  H01L27/08 ,  H01L23/48 ,  H01G4/33 ,  H01G4/012 ,  H01L21/48 ,  H01L27/12 ,  H01L23/522

CPC classification number: H01L28/90 ,  H01G4/012 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5223 ,  H01L27/0805 ,  H01L27/12 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are space-efficient capacitors that have a higher quality factor than conventional designs and improve coupling of electrical energy from a through-glass via (TGV) to a dielectric. For example, provided is a TGV having a non-rectangular cross-section, where one end of the TGV is coupled to a first metal plate. A dielectric material is formed on the first metal plate. A second metal plate is formed on the dielectric material in a manner that overlaps at least a portion of the first metal plate to form at least one overlapped region of the dielectric material. At least a part of the perimeter of the overlapped region is non-planar. The overlapped region can be formed in a shape of a closed ring, in a plurality of portions of a ring shape, in substantially a quarter of a ring shape, and/or in substantially a half of a ring shape.

Abstract translation: 提供的空间效率电容器具有比传统设计更高的品质因数，并且改善了从直通玻璃通孔（TGV）到电介质的电能的耦合。 例如，提供了具有非矩形横截面的TGV，其中TGV的一端耦合到第一金属板。 在第一金属板上形成电介质材料。 第二金属板以与第一金属板的至少一部分重叠以形成电介质材料的至少一个重叠区域的方式形成在电介质材料上。 重叠区域的周边的至少一部分是非平面的。 重叠区域可以形成为环形的多个部分中的大致四分之一环形的闭环形状和/或大致一半的环形形状。