- 专利标题： Semiconductor device and fabrication method thereof
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申请号： US13551107申请日： 2012-07-17
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公开(公告)号： US09799750B2公开(公告)日： 2017-10-24
- 发明人: Chun-Fai Cheng , Han-Ting Tsai , An-Shen Chang , Hui-Min Lin
- 申请人： Chun-Fai Cheng , Han-Ting Tsai , An-Shen Chang , Hui-Min Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L29/66 ; H01L21/8238 ; H01L29/78
摘要：
A semiconductor device and a method for fabricating the semiconductor device are disclosed. An isolation structure is formed in a substrate and a gate stack is formed atop the isolation structure. A spacer is formed adjoining a sidewall of the gate stack and extends beyond an edge of the isolation structure. The disclosed method provides an improved method for protecting the isolation structure by using the spacer. The spacer can prevent the isolation structure from being damaged by chemicals, therefor, to enhance contact landing and upgrade the device performance.
公开/授权文献
- US20140021517A1 Semiconductor Device and Fabrication Method Thereof 公开/授权日：2014-01-23
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