公开(公告)号：US09847225B2

公开(公告)日：2017-12-19

申请号：US13296908

申请日：2011-11-15

Applicant: Chun-Fai Cheng ,  An-Shen Chang ,  Hui-Min Lin ,  Tsz-Mei Kwok ,  Hsien-Ching Lo

Inventor： Chun-Fai Cheng ,  An-Shen Chang ,  Hui-Min Lin ,  Tsz-Mei Kwok ,  Hsien-Ching Lo

IPC: H01L29/772 ,  H01L21/336 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/02639 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

Abstract: An integrated circuit device and method for manufacturing the integrated circuit device are disclosed. The disclosed method comprises forming a wedge-shaped recess with an initial bottom surface in the substrate; transforming the wedge-shaped recess into an enlarged recess with a height greater than the height of the wedge-shaped recess; and epitaxially growing a strained material in the enlarged recess.

公开(公告)号：US09130058B2

公开(公告)日：2015-09-08

申请号：US12874039

申请日：2010-09-01

Applicant: Chen-Ping Chen ,  Hui-Min Lin ,  Ming-Jie Huang ,  Tung Ying Lee

Inventor： Chen-Ping Chen ,  Hui-Min Lin ,  Ming-Jie Huang ,  Tung Ying Lee

IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A device includes a plurality of intra-device insulation regions having a first height; and a plurality of semiconductor fins horizontally spaced apart from each other by the plurality of intra-device insulation regions. A portion of the plurality of semiconductor fins is disposed above the plurality of intra-device insulation regions. The device further includes a first inter-device insulation region and a second inter-device insulation region with the plurality of semiconductor fins disposed therebetween. The first and the second inter-device insulation regions have a second height greater than the first height.

Abstract translation: 一种器件包括具有第一高度的多个器件内绝缘区域; 以及通过多个器件间绝缘区域彼此水平间隔开的多个半导体鳍片。 多个半导体鳍片的一部分设置在多个器件内绝缘区域的上方。 该装置还包括第一器件间绝缘区域和设置在其间的多个半导体鳍片的第二器件间绝缘区域。 第一和第二器件间绝缘区域具有大于第一高度的第二高度。

公开(公告)号：US08497001B2

公开(公告)日：2013-07-30

申请号：US13667743

申请日：2012-11-02

Applicant: Cho-Ying Lin ,  Ding-Jen Chen ,  Hui-Min Lin ,  Yang-Ching Lin

Inventor： Cho-Ying Lin ,  Ding-Jen Chen ,  Hui-Min Lin ,  Yang-Ching Lin

IPC: G02F1/1337 ,  C09K19/38

CPC classification number: G02F1/133703 ,  Y10T428/10 ,  Y10T428/1005 ,  Y10T428/1059

Abstract: A first substrate and a second substrate are provided. An alignment process is performed on a surface of the first substrate and a surface of the second substrate respectively. A liquid crystal mixture is prepared, where the liquid crystal mixture includes a liquid crystal molecule and a liquid crystal monomer having a functional group of diacrylates, and the liquid crystal monomer having the functional group of diacrylates occupies 0.01-2 wt % of the liquid crystal mixture. The first substrate and the second substrate are assembled, and the liquid crystal mixture is filled therebetween. A polymerization curing process is performed such that the liquid crystal monomer having the functional group of diacrylates is polymerized to respectively form a liquid crystal polymer film on the aligned surfaces of the first and second substrates. The method enhances anchoring energy and reduces problems of V-T shift, surface gliding, and residual image.

Abstract translation: 提供第一基板和第二基板。 分别在第一基板的表面和第二基板的表面上进行对准处理。 制备液晶混合物，其中液晶混合物包括液晶分子和具有二丙烯酸酯官能团的液晶单体，具有二丙烯酸酯官能团的液晶单体占液晶的0.01-2重量％ 混合物。 组装第一基板和第二基板，并且在其间填充液晶混合物。 进行聚合固化过程，使得具有二丙烯酸酯官能团的液晶单体聚合，以在第一和第二基板的对准表面上分别形成液晶聚合物膜。 该方法增强了锚固能量，减少了V-T位移，表面滑动和残差图像的问题。

公开(公告)号：US20120049294A1

公开(公告)日：2012-03-01

申请号：US12874039

申请日：2010-09-01

Applicant: Chen-Ping Chen ,  Hui-Min Lin ,  Ming-Jie Huang ,  Tung Ying Lee

Inventor： Chen-Ping Chen ,  Hui-Min Lin ,  Ming-Jie Huang ,  Tung Ying Lee

IPC: H01L27/088 ,  H01L21/28

CPC classification number: H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A device includes a plurality of intra-device insulation regions having a first height; and a plurality of semiconductor fins horizontally spaced apart from each other by the plurality of intra-device insulation regions. A portion of the plurality of semiconductor fins is disposed above the plurality of intra-device insulation regions. The device further includes a first inter-device insulation region and a second inter-device insulation region with the plurality of semiconductor fins disposed therebetween. The first and the second inter-device insulation regions have a second height greater than the first height.

Abstract translation: 一种器件包括具有第一高度的多个器件内绝缘区域; 以及通过多个器件间绝缘区域彼此水平间隔开的多个半导体鳍片。 多个半导体鳍片的一部分设置在多个器件内绝缘区域的上方。 该装置还包括第一器件间绝缘区域和设置在其间的多个半导体鳍片的第二器件间绝缘区域。 第一和第二器件间绝缘区域具有大于第一高度的第二高度。

公开(公告)号：US20140021517A1

公开(公告)日：2014-01-23

申请号：US13551107

申请日：2012-07-17

Applicant: Chun-Fai Cheng ,  Han-Ting Tsai ,  An-Shen Chang ,  Hui-Min Lin

Inventor： Chun-Fai Cheng ,  Han-Ting Tsai ,  An-Shen Chang ,  Hui-Min Lin

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/66636 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/7848

Abstract: A semiconductor device and a method for fabricating the semiconductor device are disclosed. An isolation structure is formed in a substrate and a gate stack is formed atop the isolation structure. A spacer is formed adjoining a sidewall of the gate stack and extends beyond an edge of the isolation structure. The disclosed method provides an improved method for protecting the isolation structure by using the spacer. The spacer can prevent the isolation structure from being damaged by chemicals, therefor, to enhance contact landing and upgrade the device performance.

Abstract translation: 公开了一种用于制造半导体器件的半导体器件和方法。 在衬底中形成隔离结构，并且在隔离结构的顶部形成栅叠层。 邻接栅叠层的侧壁并且延伸超出隔离结构的边缘的间隔件。 所公开的方法提供了通过使用间隔物来保护隔离结构的改进方法。 间隔件可以防止隔离结构被化学物质损坏，从而增强接触着陆和提升设备性能。

公开(公告)号：US09799750B2

公开(公告)日：2017-10-24

申请号：US13551107

申请日：2012-07-17

Applicant: Chun-Fai Cheng ,  Han-Ting Tsai ,  An-Shen Chang ,  Hui-Min Lin

Inventor： Chun-Fai Cheng ,  Han-Ting Tsai ,  An-Shen Chang ,  Hui-Min Lin

IPC: H01L29/772 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/78

CPC classification number: H01L29/66636 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/7848

Abstract: A semiconductor device and a method for fabricating the semiconductor device are disclosed. An isolation structure is formed in a substrate and a gate stack is formed atop the isolation structure. A spacer is formed adjoining a sidewall of the gate stack and extends beyond an edge of the isolation structure. The disclosed method provides an improved method for protecting the isolation structure by using the spacer. The spacer can prevent the isolation structure from being damaged by chemicals, therefor, to enhance contact landing and upgrade the device performance.

公开(公告)号：US20130119444A1

公开(公告)日：2013-05-16

申请号：US13296908

申请日：2011-11-15

Applicant: Chun-Fai CHENG ,  An-Shen CHANG ,  Hui-Min LIN ,  Tsz-Mei KWOK ,  Hsien-Ching LO

Inventor： Chun-Fai CHENG ,  An-Shen CHANG ,  Hui-Min LIN ,  Tsz-Mei KWOK ,  Hsien-Ching LO

IPC: H01L29/772 ,  H01L21/28 ,  H01L21/336

CPC classification number: H01L21/02639 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

Abstract: An integrated circuit device and method for manufacturing the integrated circuit device are disclosed. The disclosed method comprises forming a wedge-shaped recess with an initial bottom surface in the substrate; transforming the wedge-shaped recess into an enlarged recess with a height greater than the height of the wedge-shaped recess; and epitaxially growing a strained material in the enlarged recess.

Abstract translation: 公开了一种用于制造集成电路器件的集成电路器件和方法。 所公开的方法包括在衬底中形成具有初始底表面的楔形凹部; 将楔形凹部转变成具有大于楔形凹部的高度的高度的扩大凹部; 并在扩大的凹部中外延生长应变材料。

公开(公告)号：US08325304B2

公开(公告)日：2012-12-04

申请号：US12592677

申请日：2009-11-30

Applicant: Cho-Ying Lin ,  Ding-Jen Chen ,  Hui-Min Lin ,  Yang-Ching Lin

Inventor： Cho-Ying Lin ,  Ding-Jen Chen ,  Hui-Min Lin ,  Yang-Ching Lin

IPC: G02F1/1337 ,  G02F1/141

CPC classification number: G02F1/133703 ,  Y10T428/10 ,  Y10T428/1005 ,  Y10T428/1059

Abstract: A first substrate and a second substrate are provided. An alignment process is performed on a surface of the first substrate and a surface of the second substrate respectively. A liquid crystal mixture is prepared, where the liquid crystal mixture includes a liquid crystal molecule and a liquid crystal monomer having a functional group of diacrylates, and the liquid crystal monomer having the functional group of diacrylates occupies 0.01-2 wt % of the liquid crystal mixture. The first substrate and the second substrate are assembled, and the liquid crystal mixture is filled therebetween. A polymerization curing process is performed such that the liquid crystal monomer having the functional group of diacrylates is polymerized to respectively form a liquid crystal polymer film on the aligned surfaces of the first and second substrates. The method enhances anchoring energy and reduces problems of V-T shift, surface gliding, and residual image.

Abstract translation: 提供第一基板和第二基板。 分别在第一基板的表面和第二基板的表面上进行对准处理。 制备液晶混合物，其中液晶混合物包括液晶分子和具有二丙烯酸酯官能团的液晶单体，具有二丙烯酸酯官能团的液晶单体占液晶的0.01-2重量％ 混合物。 组装第一基板和第二基板，并将液晶混合物填充在其间。 进行聚合固化过程，使得具有二丙烯酸酯官能团的液晶单体聚合，以在第一和第二基板的对准表面上分别形成液晶聚合物膜。 该方法增强了锚固能量，减少了V-T位移，表面滑动和残差图像的问题。

公开(公告)号：US20120095132A1

公开(公告)日：2012-04-19

申请号：US12907364

申请日：2010-10-19

Applicant: Chung-Hao CHANG ,  Chia-Hsiu Yeh ,  Hui-Min Lin

Inventor： Chung-Hao CHANG ,  Chia-Hsiu Yeh ,  Hui-Min Lin

IPC: C08L63/02

CPC classification number: C08G59/621 ,  C08G59/1477 ,  C08G59/5086

Abstract: A halogen- and phosphorus-free thermosetting resin composition is provided, which is mainly a varnish resin formed by mixing a mixture of two curing agents, an epoxy resin mixture, and an inorganic additive. The mixture of two curing agents is formed by mixing a phenolphthalein modified benzoxazine phenol aldehyde curing agent and an amino triazine novolak, and the epoxy resin mixture is formed by mixing an epoxy resin having an oxazolidone ring or a polyamide-imide-modified epoxy resin and a Bisphenol F epoxy resin.

Abstract translation: 提供了一种不含卤素和无磷的热固性树脂组合物，其主要是通过混合两种固化剂，环氧树脂混合物和无机添加剂的混合物形成的清漆树脂。 通过混合酚酞改性苯并恶嗪酚醛固化剂和氨基三嗪酚醛清漆形成两种固化剂的混合物，环氧树脂混合物通过将具有恶唑烷酮环或聚酰胺 - 酰亚胺改性的环氧树脂的环氧树脂和 双酚F环氧树脂。

公开(公告)号：US20130056890A1

公开(公告)日：2013-03-07

申请号：US13667743

申请日：2012-11-02

Applicant: Cho-Ying Lin ,  Ding-Jen Chen ,  Hui-Min Lin ,  Yang-Ching Lin

Inventor： Cho-Ying Lin ,  Ding-Jen Chen ,  Hui-Min Lin ,  Yang-Ching Lin

IPC: B29D11/00

CPC classification number: G02F1/133703 ,  Y10T428/10 ,  Y10T428/1005 ,  Y10T428/1059

Abstract: A first substrate and a second substrate are provided. An alignment process is performed on a surface of the first substrate and a surface of the second substrate respectively. A liquid crystal mixture is prepared, where the liquid crystal mixture includes a liquid crystal molecule and a liquid crystal monomer having a functional group of diacrylates, and the liquid crystal monomer having the functional group of diacrylates occupies 0.01-2 wt % of the liquid crystal mixture. The first substrate and the second substrate are assembled, and the liquid crystal mixture is filled therebetween. A polymerization curing process is performed such that the liquid crystal monomer having the functional group of diacrylates is polymerized to respectively form a liquid crystal polymer film on the aligned surfaces of the first and second substrates. The method enhances anchoring energy and reduces problems of V-T shift, surface gliding, and residual image.

Abstract translation: 提供第一基板和第二基板。 分别在第一基板的表面和第二基板的表面上进行对准处理。 制备液晶混合物，其中液晶混合物包括液晶分子和具有二丙烯酸酯官能团的液晶单体，具有二丙烯酸酯官能团的液晶单体占液晶的0.01-2重量％ 混合物。 组装第一基板和第二基板，并且在其间填充液晶混合物。 进行聚合固化过程，使得具有二丙烯酸酯官能团的液晶单体聚合，以在第一和第二基板的对准表面上分别形成液晶聚合物膜。 该方法增强了锚固能量，减少了V-T位移，表面滑动和残差图像的问题。