公开(公告)号：US09799750B2

公开(公告)日：2017-10-24

申请号：US13551107

申请日：2012-07-17

申请人： Chun-Fai Cheng ,  Han-Ting Tsai ,  An-Shen Chang ,  Hui-Min Lin

发明人： Chun-Fai Cheng ,  Han-Ting Tsai ,  An-Shen Chang ,  Hui-Min Lin

IPC分类号： H01L29/772 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/78

CPC分类号： H01L29/66636 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/7848

摘要： A semiconductor device and a method for fabricating the semiconductor device are disclosed. An isolation structure is formed in a substrate and a gate stack is formed atop the isolation structure. A spacer is formed adjoining a sidewall of the gate stack and extends beyond an edge of the isolation structure. The disclosed method provides an improved method for protecting the isolation structure by using the spacer. The spacer can prevent the isolation structure from being damaged by chemicals, therefor, to enhance contact landing and upgrade the device performance.

公开(公告)号：US20140021517A1

公开(公告)日：2014-01-23

申请号：US13551107

申请日：2012-07-17

申请人： Chun-Fai Cheng ,  Han-Ting Tsai ,  An-Shen Chang ,  Hui-Min Lin

发明人： Chun-Fai Cheng ,  Han-Ting Tsai ,  An-Shen Chang ,  Hui-Min Lin

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L29/66636 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/7848

摘要： A semiconductor device and a method for fabricating the semiconductor device are disclosed. An isolation structure is formed in a substrate and a gate stack is formed atop the isolation structure. A spacer is formed adjoining a sidewall of the gate stack and extends beyond an edge of the isolation structure. The disclosed method provides an improved method for protecting the isolation structure by using the spacer. The spacer can prevent the isolation structure from being damaged by chemicals, therefor, to enhance contact landing and upgrade the device performance.

摘要翻译： 公开了一种用于制造半导体器件的半导体器件和方法。 在衬底中形成隔离结构，并且在隔离结构的顶部形成栅叠层。 邻接栅叠层的侧壁并且延伸超出隔离结构的边缘的间隔件。 所公开的方法提供了通过使用间隔物来保护隔离结构的改进方法。 间隔件可以防止隔离结构被化学物质损坏，从而增强接触着陆和提升设备性能。

公开(公告)号：US09847225B2

公开(公告)日：2017-12-19

申请号：US13296908

申请日：2011-11-15

申请人： Chun-Fai Cheng ,  An-Shen Chang ,  Hui-Min Lin ,  Tsz-Mei Kwok ,  Hsien-Ching Lo

发明人： Chun-Fai Cheng ,  An-Shen Chang ,  Hui-Min Lin ,  Tsz-Mei Kwok ,  Hsien-Ching Lo

IPC分类号： H01L29/772 ,  H01L21/336 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/02639 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： An integrated circuit device and method for manufacturing the integrated circuit device are disclosed. The disclosed method comprises forming a wedge-shaped recess with an initial bottom surface in the substrate; transforming the wedge-shaped recess into an enlarged recess with a height greater than the height of the wedge-shaped recess; and epitaxially growing a strained material in the enlarged recess.

公开(公告)号：US08759943B2

公开(公告)日：2014-06-24

申请号：US12900626

申请日：2010-10-08

申请人： Chih-Hung Tseng ,  Da-Wen Lin ,  Chien-Tai Chan ,  Chia-Pin Lin ,  Li-Wen Weng ,  An-Shen Chang ,  Chung-Cheng Wu

发明人： Chih-Hung Tseng ,  Da-Wen Lin ,  Chien-Tai Chan ,  Chia-Pin Lin ,  Li-Wen Weng ,  An-Shen Chang ,  Chung-Cheng Wu

IPC分类号： H01L29/78

CPC分类号： H01L29/7851 ,  H01L29/66795 ,  H01L29/7853

摘要： A transistor includes a notched fin covered under a shallow trench isolation layer. One or more notch may be used, the size of which may vary along a lateral direction of the fin. In some embodiments, The notch is formed using anisotropic wet etching that is selective according to silicon orientation. Example wet etchants are tetramethylammonium hydroxide (TMAH) or potassium hydroxide (KOH).

摘要翻译： 晶体管包括覆盖在浅沟槽隔离层下面的切口鳍。 可以使用一个或多个凹口，其尺寸可以沿翅片的横向方向变化。 在一些实施例中，使用根据硅取向选择性的各向异性湿蚀刻形成凹口。 实例湿蚀刻剂是氢氧化四甲基铵（TMAH）或氢氧化钾（KOH）。