Invention Grant
- Patent Title: Field effect transistor and method of manufacture
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Application No.: US14523076Application Date: 2014-10-24
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Publication No.: US09847415B2Publication Date: 2017-12-19
- Inventor: Alan B. Botula , Alvin J. Joseph , Stephen E. Luce , John J. Pekarik , Yun Shi
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Michael Le Strange; Andrew M. Calderon
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L29/417 ; H01L29/66 ; H01L29/08 ; H01L29/423

Abstract:
A semiconductor structure and method of manufacture and, more particularly, a field effect transistor that has a body contact and method of manufacturing the same is provided. The structure includes a device having a raised source region of a first conductivity type and an active region below the raised source region extending to a body of the device. The active region has a second conductivity type different than the first conductivity type. A contact region is in electric contact with the active region. The method includes forming a raised source region over an active region of a device and forming a contact region of a same conductivity type as the active region, wherein the active region forms a contact body between the contact region and a body of the device.
Public/Granted literature
- US20150041896A1 FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURE Public/Granted day:2015-02-12
Information query
IPC分类: