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    Charge breakdown avoidance for MIM elements in SOI base technology and method
    3.
    发明授权
    Charge breakdown avoidance for MIM elements in SOI base technology and method 有权
    SOI基底技术和方法中MIM元件的电荷分解避免

    公开(公告)号：US09059131B2

    公开(公告)日：2015-06-16

    申请号：US14030414

    申请日：2013-09-18

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： William F. Clark, Jr. ,  Stephen E. Luce

    IPC: H01L27/108 ,  H01L49/02 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13

    CPC classification number: H01L28/40 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/13

    Abstract: A semiconductor device including at least one capacitor formed in wiring levels on a silicon-on-insulator (SOI) substrate, wherein the at least one capacitor is coupled to an active layer of the SOI substrate. A method of fabricating a semiconductor structure includes forming an SOI substrate, forming a BOX layer over the SOI substrate, and forming at least one capacitor in wiring levels on the BOX layer, wherein the at least one capacitor is coupled to an active layer of the SOI substrate.

    Abstract translation: 一种半导体器件，包括形成在绝缘体上硅（SOI）衬底上的布线层中的至少一个电容器，其中所述至少一个电容器耦合到所述SOI衬底的有源层。 制造半导体结构的方法包括形成SOI衬底，在SOI衬底上形成BOX层，以及在BOX层上形成布线层中的至少一个电容器，其中至少一个电容器耦合到 SOI衬底。

    Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered airgap field plates
    5.
    发明授权
    Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered airgap field plates 有权
    横向扩展漏极金属氧化物半导体场效应晶体管（LEDMOSFET）具有锥形气隙场板

    公开(公告)号：US09245960B2

    公开(公告)日：2016-01-26

    申请号：US13762450

    申请日：2013-02-08

    Applicant: International Business Machines Corporation

    Inventor： Michel J. Abou-Khalil ,  Theodore J. Letavic ,  Stephen E. Luce ,  Anthony K. Stamper

    IPC: H01L29/40 ,  H01L29/66 ,  H01L29/78

    CPC classification number: H01L29/407 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66795 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/785

    Abstract: Disclosed are embodiments of a lateral, extended drain, metal oxide semiconductor, field effect transistor (LEDMOSFET) having tapered dielectric field plates positioned laterally between conductive field plates and opposing sides of a drain drift region of the LEDMOSFET. Each dielectric field plate comprises, in whole or in part, an airgap. These field plates form plate capacitors that can create an essentially uniform horizontal electric field profile within the drain drift region so that the LEDMOSFET can exhibit a specific, relatively high, breakdown voltage (Vb). Tapered dielectric field plates that incorporate airgaps provide for better control over the creation of the uniform horizontal electric field profile within the drain drift region, as compared to tapered dielectric field plates without such airgaps and, thereby ensure that the LEDMOSFET exhibits the specific, relatively high, Vb desired. Also disclosed herein are embodiments of a method of forming such an LEDMOSFET.

    Abstract translation: 公开了横向扩展漏极，金属氧化物半导体场效应晶体管（LEDMOSFET）的实施例，其具有位于LEDMOSFET的漏极漂移区域的导电场板和相对侧之间横向的锥形介质场板。 每个电介质场板全部或部分包括气隙。 这些场板形成板电容器，其可以在漏极漂移区域内产生基本上均匀的水平电场分布，使得LEDMOSFET可以呈现特定的相对高的击穿电压（Vb）。 与没有这种气隙的锥形介质场板相比，掺入气隙的锥形电介质场板提供了更好地控制在漏极漂移区域内产生均匀水平电场分布的更好的控制，从而确保LEDMOSFET表现出特定的，较高的 ，Vb需要。 本文还公开了形成这种LEDMOSFET的方法的实施例。

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