- 专利标题： Method and apparatus for gap fill using deposition and etch processes
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申请号： US15185238申请日： 2016-06-17
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公开(公告)号： US09865499B2公开(公告)日： 2018-01-09
- 发明人: Jun Sato , Hiroyuki Kikuchi , Masahiro Murata , Shigehiro Miura
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： IPUSA, PLLC
- 优先权： JP2015-126036 20150623
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/67 ; H01L21/687 ; H01L21/02 ; H01L21/311 ; C23C16/455 ; C23C16/04 ; C23C16/40
摘要：
A method for depositing a silicon-containing film is performed by causing a silicon-containing gas to adsorb on a first surface of a depression formed in a second surface of a substrate by supplying the silicon-containing gas to the substrate. A silicon component contained in the silicon-containing gas adsorbed on the first surface of the depression is partially etched by supplying an etching gas to the substrate. A silicon-containing film is deposited in the depression by supplying a reaction gas reactable with the silicon component to the substrate so as to produce a reaction product by causing the reaction gas to react with the silicon component left in the depression without being etched.
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