Invention Grant
- Patent Title: Solid precursor delivery method using liquid solvent for thin film deposition
-
Application No.: US15138473Application Date: 2016-04-26
-
Publication No.: US09869018B2Publication Date: 2018-01-16
- Inventor: Chung-Chieh Lee , Chi-Ming Yang , Lin-Jung Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: C23C16/48
- IPC: C23C16/48 ; C23C16/448 ; C23C16/44 ; C23C16/40

Abstract:
A method of solid precursor delivery for a vapor deposition process is provided. In some embodiments, a precursor ampoule is provided including a solid precursor arranged in the precursor ampoule. A solvent is added to the precursor ampoule including one or more ionic liquids to dissolve chemical species of the solid precursor and to form a liquid precursor. A carrier gas is applied into the liquid precursor through an inlet of the precursor ampoule. A gas precursor is generated at an upper region of the precursor ampoule by vaporization of the liquid precursor. The chemical species of the solid precursor are delivered into a vapor deposition chamber by the carrier gas. The chemical species of the solid precursor is deposited onto a substrate within the vapor deposition chamber.
Public/Granted literature
- US20170306485A1 Solid Precursor Delivery Method Using Liquid Solvent for Thin Film Deposition Public/Granted day:2017-10-26
Information query
IPC分类: