Invention Grant
- Patent Title: Etching method, etching apparatus, and storage medium
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Application No.: US15024084Application Date: 2014-09-19
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Publication No.: US09887092B2Publication Date: 2018-02-06
- Inventor: Takahiro Furukawa , Yusuke Futamata , Hideaki Sato , Hiromi Hara , Takahiro Kawazu , Toshiyuki Shiokawa , Takami Satoh
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Abelman Frayne & Schwab
- Priority: JP2013-202325 20130927
- International Application: PCT/JP2014/074875 WO 20140919
- International Announcement: WO2015/046067 WO 20150402
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/306 ; H01L21/311 ; H01L21/67

Abstract:
Provided is an etching method including: an etching step of performing an etching processing using an etching liquid on a workpiece accommodated in an etching processing unit; and an interval step between the etching step on the workpiece and a next etching step on another workpiece. The etching step includes a first partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a first set amount, and supplying a new etching liquid into the etching processing unit by a second set amount, and the interval step includes a second partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a third set amount, and supplying a new etching liquid into the etching processing unit by a fourth set amount.
Public/Granted literature
- US20160233106A1 ETCHING METHOD, ETCHING APPARATUS, AND STORAGE MEDIUM Public/Granted day:2016-08-11
Information query
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