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公开(公告)号：US11410861B2
公开(公告)日：2022-08-09
申请号：US15895106
申请日：2018-02-13
Applicant: Tokyo Electron Limited
Inventor： Takashi Nagai , Hideaki Sato , Junichi Kitano , Kenji Goto
IPC: H01L21/67 , H01L21/311
Abstract: A substrate liquid processing apparatus includes a processing tub 34 which is configured to store therein a processing liquid and in which a processing of a substrate is performed by immersing the substrate in the stored processing liquid; a circulation line 50 connected to the processing tub; a pump 51 provided at the circulation line and configured to generate a flow of the processing liquid flowing out from the processing tub and returning back to the processing tub after passing through the circulation line; and a heater 52 provided at the circulation line and configured to heat the processing liquid. At least two temperature sensors 81 to 83 are provided at different positions within a circulation system including the processing tub and the circulation line. Controllers 90 and 100 control a heat generation amount of the heater based on detection temperatures of the at least two temperature sensors.
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公开(公告)号：US11062922B2
公开(公告)日：2021-07-13
申请号：US15905941
申请日：2018-02-27
Applicant: Tokyo Electron Limited
Inventor： Takashi Nagai , Hideaki Sato , Hiromi Hara , Hiroshi Yoshida , Tsukasa Hirayama
Abstract: A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.
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公开(公告)号：US10985035B2
公开(公告)日：2021-04-20
申请号：US14608718
申请日：2015-01-29
Applicant: Tokyo Electron Limited
Inventor： Hiromi Hara , Hideaki Sato , Takahiro Kawazu , Takashi Nagai
Abstract: Disclosed is a method for performing a liquid processing on a substrate using an aqueous solution of a chemical agent at a predetermined concentration as a processing liquid. The method includes: storing the processing liquid in a processing liquid storage unit; and supplying an aqueous solution of the chemical agent at a different concentration from the concentration of the processing liquid to the processing liquid storage unit, discharging the processing liquid from the processing liquid storage unit so as to update the processing liquid stored in the processing liquid storage unit. The aqueous solution in a predetermined amount is supplied to the processing liquid storage unit, and the processing liquid is discharged from the processing liquid storage unit, the processing liquid containing the chemical agent in the same amount as the amount of the chemical agent contained in the aqueous solution supplied to the processing liquid storage unit.
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公开(公告)号：US20190080938A1
公开(公告)日：2019-03-14
申请号：US16126106
申请日：2018-09-10
Applicant: Tokyo Electron Limited
Inventor： Takahiro Kawazu , Takafumi Tsuchiya , Hideaki Sato , Hidemasa Aratake , Osamu Kuroda , Takashi Nagai , Jiro Harada
IPC: H01L21/67 , G05B19/418
Abstract: A substrate liquid processing apparatus A1 includes a processing liquid storage unit 38 configured to store a processing liquid therein; a processing liquid drain unit 41 configured to drain the processing liquid from the processing liquid storage unit 38; and a control unit 7. The control unit 7 performs a first control in a constant concentration mode in which a concentration of the processing liquid in the processing liquid storage unit 38 is regulated to a predetermined set concentration and a second control in a concentration changing mode in which the concentration of the processing liquid is changed. In the second control, a set concentration after concentration change is compared with a set concentration before the concentration change, and when the set concentration after the concentration change is lower, the control unit controls the processing liquid drain unit 41 to start draining of the processing liquid.
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公开(公告)号：US09887092B2
公开(公告)日：2018-02-06
申请号：US15024084
申请日：2014-09-19
Applicant: Tokyo Electron Limited
Inventor： Takahiro Furukawa , Yusuke Futamata , Hideaki Sato , Hiromi Hara , Takahiro Kawazu , Toshiyuki Shiokawa , Takami Satoh
IPC: H01L21/302 , H01L21/306 , H01L21/311 , H01L21/67
CPC classification number: H01L21/30604 , H01L21/31111 , H01L21/67086
Abstract: Provided is an etching method including: an etching step of performing an etching processing using an etching liquid on a workpiece accommodated in an etching processing unit; and an interval step between the etching step on the workpiece and a next etching step on another workpiece. The etching step includes a first partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a first set amount, and supplying a new etching liquid into the etching processing unit by a second set amount, and the interval step includes a second partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a third set amount, and supplying a new etching liquid into the etching processing unit by a fourth set amount.
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Patent Agency Ranking
公开(公告)号：US09859109B2
公开(公告)日：2018-01-02
申请号：US14259341
申请日：2014-04-23
Applicant: Tokyo Electron Limited
Inventor： Hideaki Sato
CPC classification number: H01L21/02052 , H01L21/67057
Abstract: Disclosed is a substrate processing apparatus, a substrate processing method and a computer-readable medium capable of recovering an extended amount of discharged solution from a processing unit thereby reducing the amount of deionized water for the processing and the cost. The substrate processing apparatus includes, inter alia, a first and second discharge solution lines each connected to a downstream side of a discharge unit, and the discharged solution from each of the first and second discharge solution lines is independently delivered to the processing solution supply unit as a recovered solution. Also, the substrate processing apparatus includes a converting unit that converts flow of the discharged solution from the discharge unit either to the first discharge solution line or to the second discharge solution line. The processing solution supply unit selectively delivers the recovered solution from the first and second discharge solution lines to the processing unit.
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公开(公告)号：US20160233106A1
公开(公告)日：2016-08-11
申请号：US15024084
申请日：2014-09-19
Applicant: TOKYO ELECTRON LIMITED
Inventor： Takahiro Furukawa , Yusuke Futamata , Hideaki Sato , Hiromi Hara , Takahiro Kawazu , Toshiyuki Shiokawa , Takami Satoh
IPC: H01L21/306 , H01L21/67 , H01L21/311
CPC classification number: H01L21/30604 , H01L21/31111 , H01L21/67086
Abstract: [Problem] To perform precise etching treatment on a wafer by maintaining in a given range the concentration of leached components in an etching solution leaching from a wafer, without completely replacing the etching solution.[Solution] This etching method comprises a plurality of etching steps, and an interval step between each of the etching steps. Each etching step contains a first partial replacement pattern wherein only a first set amount of the etching solution supplied for the etching treatment is discharged, and only a second set amount of fresh etching solution is supplied. The interval step contains a second partial replacement pattern wherein only a third set amount of the etching solution supplied for the etching treatment is discharged, and only a fourth set amount of the fresh etching solution is supplied.
Abstract translation: [问题]通过在给定范围内，在不完全替代蚀刻溶液的情况下，在晶片中浸出的蚀刻溶液中的浸出组分的浓度保持在晶片上进行精确的蚀刻处理。 [解决方案]该蚀刻方法包括多个蚀刻步骤，以及每个蚀刻步骤之间的间隔步骤。 每个蚀刻步骤包含第一部分替换图案，其中仅提供用于蚀刻处理的第一设定量的蚀刻溶液被排出，并且仅提供第二设定量的新鲜蚀刻溶液。 间隔步骤包括第二部分替换图案，其中仅提供用于蚀刻处理的第三设定量的蚀刻溶液被排出，并且仅提供第四设定量的新鲜蚀刻溶液。
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公开(公告)号：US11869781B2
公开(公告)日：2024-01-09
申请号：US16454236
申请日：2019-06-27
Applicant: Tokyo Electron Limited
Inventor： Hiroshi Yoshida , Hideaki Sato
IPC: H01L21/67 , H01L21/3213
CPC classification number: H01L21/67086 , H01L21/32134
Abstract: A substrate processing apparatus includes a processing tub configured to store therein a processing liquid in which a substrate is immersed to be processed, the processing liquid including a first component and a second component having a boiling point higher than that of the first component; an adjusting liquid supply configured to supply an adjusting liquid configured to adjust a concentration of the second component into the processing tub, the adjusting liquid including the first component; and a controller configured to control the adjusting liquid supply. When changing the concentration, the controller calculates a liquid surface height in the processing tub corresponding to the concentration after being changed based on a concentration difference between the concentration after being changed and the concentration before being changed, and the controller controls a supply of the adjusting liquid into the processing tub based on the calculated liquid surface height.
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公开(公告)号：US11869780B2
公开(公告)日：2024-01-09
申请号：US16126106
申请日：2018-09-10
Applicant: Tokyo Electron Limited
Inventor： Takahiro Kawazu , Takafumi Tsuchiya , Hideaki Sato , Hidemasa Aratake , Osamu Kuroda , Takashi Nagai , Jiro Harada
IPC: H01L21/06 , H01L21/677 , H01L21/67
CPC classification number: H01L21/67086 , H01L21/6719 , H01L21/67253 , H01L21/67057 , H01L21/67173 , H01L21/67754
Abstract: A substrate liquid processing apparatus includes a processing liquid storage unit configured to store a processing liquid therein; a processing liquid drain unit configured to drain the processing liquid from the processing liquid storage unit; and a control unit. The control unit performs a first control in a constant concentration mode in which a concentration of the processing liquid in the processing liquid storage unit is regulated to a predetermined set concentration and a second control in a concentration changing mode in which the concentration of the processing liquid is changed. In the second control, a set concentration after concentration change is compared with a set concentration before the concentration change, and when the set concentration after the concentration change is lower, the control unit controls the processing liquid drain unit to start draining of the processing liquid.
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公开(公告)号：US11185896B2
公开(公告)日：2021-11-30
申请号：US16852612
申请日：2020-04-20
Applicant: Tokyo Electron Limited
Inventor： Hideaki Sato
Abstract: A substrate liquid processing method comprises: providing a substrate liquid processing apparatus that includes a processing liquid flow path including a concentration sensor and a heater configured to heat the processing liquid; measuring a period of time for which the processing liquid is retained in the part of the processing liquid flow path including the concentration sensor; when determined that the period of time measured by the timer is longer than a predetermined period of time, 1) heating the processing liquid to a temperature higher than a crystallization temperature at which a reaction between the processing liquid and the cleaning fluid resulting in crystallization occurs, 2) supplying at least a part of the heated processing liquid into the part of the processing liquid flow path including the concentration sensor; and supplying the cleaning fluid into the part of the processing liquid flow path including the concentration sensor.
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