公开(公告)号：US09881799B2

公开(公告)日：2018-01-30

申请号：US15002546

申请日：2016-01-21

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato ,  Takami Satoh

IPC: H01L21/00 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/30604 ,  H01L21/67086 ,  H01L21/67253

Abstract: Disclosed is a substrate liquid processing apparatus including a processing liquid storage unit that stores a processing liquid; a processing liquid supply unit that supplies the processing liquid to the processing liquid storage unit; a processing liquid circulation unit that circulates the processing liquid inside the processing liquid storage unit; a processing liquid discharge unit that discharges the processing liquid; a concentration sensor that measures a concentration in the processing liquid; and a controller that controls the processing liquid supply unit. The controller controls the processing liquid circulation unit to circulate the processing liquid, the processing liquid discharge unit to discharge the circulated processing liquid intermittently at a predetermined timing or continuously for a predetermined period of time, the processing liquid supply unit to newly supply the processing liquid, and the concentration sensor to measure the concentration in the processing liquid at a predetermined timing.

公开(公告)号：US20180358240A1

公开(公告)日：2018-12-13

申请号：US15535882

申请日：2015-12-15

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Komiya ,  Yasuhiro Takaki ,  Shinichi Umeno ,  Koji Tanaka ,  Takami Satoh ,  Atsushi Anamoto

IPC: H01L21/67 ,  B08B3/04

CPC classification number: H01L21/67023 ,  B08B3/04 ,  B08B2203/027 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/6719

Abstract: A substrate liquid processing apparatus includes a transfer section, a processing section, a reservoir and a liquid sending mechanism. The transfer section includes a transfer device configured to transfer a substrate. The processing section is provided adjacent to the transfer section in a horizontal direction, and includes a liquid processing unit configured to process the substrate by using a processing liquid. The reservoir is configured to store the processing liquid therein. The liquid sending mechanism is configured to send out the processing liquid stored in the reservoir into the liquid processing unit. The reservoir is disposed directly under the transfer section. Further, the liquid sending mechanism is disposed directly under the processing section. Space saving of the substrate liquid processing apparatus can be achieved.

公开(公告)号：US20180330974A1

公开(公告)日：2018-11-15

申请号：US15775864

申请日：2016-11-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsurou Iriyama ,  Shinichi Umeno ,  Yasuhiro Takaki ,  Takami Satoh

IPC: H01L21/67

CPC classification number: H01L21/67276 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67253

Abstract: A liquid processing apparatus includes a processing unit, a first supply route, a first device, a second supply route, a second device, a housing, and an external housing. The processing unit processes a substrate by using processing liquid including first and second processing liquids. The first supply route is for supplying the first processing liquid to the processing unit. The first device is for supplying the first processing liquid to the first supply route. The second supply route is for supplying the second processing liquid to the processing unit. The second processing liquid has higher temperature than the first processing liquid. The second device is for supplying the second processing liquid to the second supply route. The housing accommodates the processing unit. The external housing accommodates the first and second devices, and is adjacent to the housing. The external housing includes a partition wall between the first and second devices.

公开(公告)号：US10714365B2

公开(公告)日：2020-07-14

申请号：US15775864

申请日：2016-11-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsurou Iriyama ,  Shinichi Umeno ,  Yasuhiro Takaki ,  Takami Satoh

IPC: H01L21/304 ,  H01L21/67

Abstract: A liquid processing apparatus includes a processing unit, a first supply route, a first device, a second supply route, a second device, a housing, and an external housing. The processing unit processes a substrate by using processing liquid including first and second processing liquids. The first supply route is for supplying the first processing liquid to the processing unit. The first device is for supplying the first processing liquid to the first supply route. The second supply route is for supplying the second processing liquid to the processing unit. The second processing liquid has higher temperature than the first processing liquid. The second device is for supplying the second processing liquid to the second supply route. The housing accommodates the processing unit. The external housing accommodates the first and second devices, and is adjacent to the housing. The external housing includes a partition wall between the first and second devices.

公开(公告)号：US09631963B2

公开(公告)日：2017-04-25

申请号：US14753956

申请日：2015-06-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryoji Ando ,  Takami Satoh

IPC: H01L21/67 ,  G01F1/66 ,  B05C11/10

CPC classification number: G01F1/66 ,  B05C11/1013

Abstract: An apparatus is configured to perform a solution process by supplying a processing solution from a processing solution supply source to the substrate held on a substrate holder via a flow path member and a nozzle at a flow rate equal to or less than 1 mL/sec. The apparatus includes a solution transfer unit configured to transfer the processing solution to the nozzle, and connected to the flow path member, and an ultrasonic flowmeter connected to the flow path member at an outlet side from the solution transfer unit. In this embodiment, a lower limit of a flow rate range which is measured by the ultrasonic flowmeter is equal to or less than 1 mL/sec.

公开(公告)号：US20160225683A1

公开(公告)日：2016-08-04

申请号：US15002546

申请日：2016-01-21

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato ,  Takami Satoh

IPC: H01L21/66 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/30604 ,  H01L21/67086 ,  H01L21/67253

Abstract: Disclosed is a substrate liquid processing apparatus including a processing liquid storage unit that stores a processing liquid; a processing liquid supply unit that supplies the processing liquid to the processing liquid storage unit; a processing liquid circulation unit that circulates the processing liquid inside the processing liquid storage unit; a processing liquid discharge unit that discharges the processing liquid; a concentration sensor that measures a concentration in the processing liquid; and a controller that controls the processing liquid supply unit. The controller controls the processing liquid circulation unit to circulate the processing liquid, the processing liquid discharge unit to discharge the circulated processing liquid intermittently at a predetermined timing or continuously for a predetermined period of time, the processing liquid supply unit to newly supply the processing liquid, and the concentration sensor to measure the concentration in the processing liquid at a predetermined timing.

Abstract translation: 公开了一种基板液体处理装置，其包括：处理液体存储单元，其存储处理液体; 处理液体供应单元，其将处理液体供应到处理液体存储单元; 处理液循环单元，其将处理液体在处理液体存储单元内循环; 处理液体排出单元，其排出处理液体; 测量处理液中浓度的浓度传感器; 以及控制处理液供给单元的控制器。 控制器控制处理液循环单元使处理液循环，处理液排出单元以预定的时间或连续地间歇地排出循环的处理液一段预定时间，处理液供给单元重新供给处理液 ，以及浓度传感器，用于在预定定时测量处理液中的浓度。

公开(公告)号：US11433420B2

公开(公告)日：2022-09-06

申请号：US16768216

申请日：2018-12-07

Applicant: Tokyo Electron Limited

Inventor： Ryouichirou Naitou ,  Masato Hayashi ,  Hideo Shite ,  Hiroyuki Ide ,  Yosuke Kameda ,  Seiya Totsuka ,  Atsumu Maita ,  Takami Satoh ,  Hirofumi Araki ,  Kentaro Yoshihara

IPC: B05C19/06 ,  B05C11/10 ,  H01L21/67

Abstract: A solution supply apparatus is for supplying a treatment solution to a treatment solution discharger which discharges the treatment solution to a treatment object. The solution supply apparatus includes: a supply pipe line connected to the treatment solution discharger; a filter provided on the supply pipe line which filters the treatment solution to remove foreign substances; and a controller. The controller performs a determination of a state of the treatment solution to be supplied to a primary side of the filter and, when the state of the treatment solution is determined to be bad, outputs a control signal for restricting supply of the treatment solution to the primary side of the filter.

公开(公告)号：US10067514B2

公开(公告)日：2018-09-04

申请号：US14543951

申请日：2014-11-18

Applicant: Tokyo Electron Limited

Inventor： Yasuo Kiyohara ,  Ikuo Sunaka ,  Koji Tanaka ,  Takami Satoh ,  Kazuyoshi Mizumoto ,  Takashi Uno ,  Hirotaka Maruyama ,  Hidetomo Uemukai ,  Tomiyasu Maezono

IPC: B01F15/04 ,  B01F15/02 ,  B01F3/08 ,  G05D11/13

Abstract: A substrate processing apparatus includes a mixing tank, a first opening/closing valve, a second opening/closing valve, a first flow rate measuring unit, a second flow rate measuring unit, a control unit, and a substrate processing unit. A first liquid and a second liquid are mixed such that the second liquid is mixed in an amount more than that of the first liquid. The first and second opening/closing valves open/close a first flow path and a second flow path, respectively. The first and second flow rate measuring units measure flow rates of the first and second liquids flowing through the first and second flow paths, respectively. The control unit controls opening/closing of the first opening/closing valve and the second opening/closing valve. The substrate processing unit processes a substrate by supplying a mixed liquid of the first and second liquids to the substrate.

公开(公告)号：US09887092B2

公开(公告)日：2018-02-06

申请号：US15024084

申请日：2014-09-19

Applicant: Tokyo Electron Limited

Inventor： Takahiro Furukawa ,  Yusuke Futamata ,  Hideaki Sato ,  Hiromi Hara ,  Takahiro Kawazu ,  Toshiyuki Shiokawa ,  Takami Satoh

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/30604 ,  H01L21/31111 ,  H01L21/67086

Abstract: Provided is an etching method including: an etching step of performing an etching processing using an etching liquid on a workpiece accommodated in an etching processing unit; and an interval step between the etching step on the workpiece and a next etching step on another workpiece. The etching step includes a first partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a first set amount, and supplying a new etching liquid into the etching processing unit by a second set amount, and the interval step includes a second partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a third set amount, and supplying a new etching liquid into the etching processing unit by a fourth set amount.

公开(公告)号：US20160233106A1

公开(公告)日：2016-08-11

申请号：US15024084

申请日：2014-09-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro Furukawa ,  Yusuke Futamata ,  Hideaki Sato ,  Hiromi Hara ,  Takahiro Kawazu ,  Toshiyuki Shiokawa ,  Takami Satoh

IPC: H01L21/306 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/30604 ,  H01L21/31111 ,  H01L21/67086

Abstract: [Problem] To perform precise etching treatment on a wafer by maintaining in a given range the concentration of leached components in an etching solution leaching from a wafer, without completely replacing the etching solution.[Solution] This etching method comprises a plurality of etching steps, and an interval step between each of the etching steps. Each etching step contains a first partial replacement pattern wherein only a first set amount of the etching solution supplied for the etching treatment is discharged, and only a second set amount of fresh etching solution is supplied. The interval step contains a second partial replacement pattern wherein only a third set amount of the etching solution supplied for the etching treatment is discharged, and only a fourth set amount of the fresh etching solution is supplied.

Abstract translation: [问题]通过在给定范围内，在不完全替代蚀刻溶液的情况下，在晶片中浸出的蚀刻溶液中的浸出组分的浓度保持在晶片上进行精确的蚀刻处理。 [解决方案]该蚀刻方法包括多个蚀刻步骤，以及每个蚀刻步骤之间的间隔步骤。 每个蚀刻步骤包含第一部分替换图案，其中仅提供用于蚀刻处理的第一设定量的蚀刻溶液被排出，并且仅提供第二设定量的新鲜蚀刻溶液。 间隔步骤包括第二部分替换图案，其中仅提供用于蚀刻处理的第三设定量的蚀刻溶液被排出，并且仅提供第四设定量的新鲜蚀刻溶液。