公开(公告)号：US09887092B2

公开(公告)日：2018-02-06

申请号：US15024084

申请日：2014-09-19

Applicant: Tokyo Electron Limited

Inventor： Takahiro Furukawa ,  Yusuke Futamata ,  Hideaki Sato ,  Hiromi Hara ,  Takahiro Kawazu ,  Toshiyuki Shiokawa ,  Takami Satoh

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/30604 ,  H01L21/31111 ,  H01L21/67086

Abstract: Provided is an etching method including: an etching step of performing an etching processing using an etching liquid on a workpiece accommodated in an etching processing unit; and an interval step between the etching step on the workpiece and a next etching step on another workpiece. The etching step includes a first partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a first set amount, and supplying a new etching liquid into the etching processing unit by a second set amount, and the interval step includes a second partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a third set amount, and supplying a new etching liquid into the etching processing unit by a fourth set amount.

公开(公告)号：US20160233106A1

公开(公告)日：2016-08-11

申请号：US15024084

申请日：2014-09-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro Furukawa ,  Yusuke Futamata ,  Hideaki Sato ,  Hiromi Hara ,  Takahiro Kawazu ,  Toshiyuki Shiokawa ,  Takami Satoh

IPC: H01L21/306 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/30604 ,  H01L21/31111 ,  H01L21/67086

Abstract: [Problem] To perform precise etching treatment on a wafer by maintaining in a given range the concentration of leached components in an etching solution leaching from a wafer, without completely replacing the etching solution.[Solution] This etching method comprises a plurality of etching steps, and an interval step between each of the etching steps. Each etching step contains a first partial replacement pattern wherein only a first set amount of the etching solution supplied for the etching treatment is discharged, and only a second set amount of fresh etching solution is supplied. The interval step contains a second partial replacement pattern wherein only a third set amount of the etching solution supplied for the etching treatment is discharged, and only a fourth set amount of the fresh etching solution is supplied.

Abstract translation: [问题]通过在给定范围内，在不完全替代蚀刻溶液的情况下，在晶片中浸出的蚀刻溶液中的浸出组分的浓度保持在晶片上进行精确的蚀刻处理。 [解决方案]该蚀刻方法包括多个蚀刻步骤，以及每个蚀刻步骤之间的间隔步骤。 每个蚀刻步骤包含第一部分替换图案，其中仅提供用于蚀刻处理的第一设定量的蚀刻溶液被排出，并且仅提供第二设定量的新鲜蚀刻溶液。 间隔步骤包括第二部分替换图案，其中仅提供用于蚀刻处理的第三设定量的蚀刻溶液被排出，并且仅提供第四设定量的新鲜蚀刻溶液。