Invention Grant
- Patent Title: Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)
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Application No.: US15119699Application Date: 2014-03-27
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Publication No.: US09932671B2Publication Date: 2018-04-03
- Inventor: James M. Blackwell , Patricio E. Romero , Scott B. Clendenning , Grant M. Kloster , Florian Gstrein , Harsono S. Simka , Paul A. Zimmerman , Robert L. Bristol
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2014/032073 WO 20140327
- International Announcement: WO2015/147843 WO 20151001
- Main IPC: H01L21/336
- IPC: H01L21/336 ; C23C16/455 ; C23C16/18 ; C23C16/48 ; H01L21/768 ; H01L21/285 ; H01L29/66 ; H01L21/033

Abstract:
Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD) is described. In an example, a method of fabricating a thin metal film involves introducing precursor molecules proximate to a surface on or above a substrate, each of the precursor molecules having one or more metal centers surrounded by ligands. The method also involves depositing a metal layer on the surface by dissociating the ligands from the precursor molecules using a photo-assisted process.
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