Invention Grant
- Patent Title: Method for growing a single crystal by crystallizing the single crystal from a float zone
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Application No.: US14945840Application Date: 2015-11-19
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Publication No.: US09932691B2Publication Date: 2018-04-03
- Inventor: Georg Raming , Ludwig Altmannshofer , Gundars Ratnieks , Martin Moeller , Frank Muemmler
- Applicant: Siltronic AG
- Applicant Address: DE Burghausen
- Assignee: SILTRONIC AG
- Current Assignee: SILTRONIC AG
- Current Assignee Address: DE Burghausen
- Agency: Brooks Kushman P.C.
- Priority: DE102014226419 20141218
- Main IPC: C30B13/26
- IPC: C30B13/26 ; C30B13/32 ; C30B13/20 ; C30B29/06
Abstract:
A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.
Public/Granted literature
- US20160177469A1 Method For Growing A Single Crystal By Crystallizing The Single Crystal From A Float Zone Public/Granted day:2016-06-23
Information query
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