公开(公告)号：US20160060786A1

公开(公告)日：2016-03-03

申请号：US14813287

申请日：2015-07-30

Applicant: SILTRONIC AG

Inventor： Kurt Niederer ,  Helmut Teroerde ,  Josef Berger ,  Goetz Meisterernst ,  Frank Muemmler ,  Simon Zitzelsberger

IPC: C30B13/00

CPC classification number: C30B13/00 ,  C30B13/285 ,  C30B29/06

Abstract: A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.

Abstract translation: 通过FZ方法在单晶结晶期间，通过支撑体在单晶的锥形区域的区域中支撑增长的单晶。 该方法包括在支撑体的第一材料变软的温度下将支撑体压靠在生长的单晶的锥形部分上，并且将支撑体继续压靠在生长的单晶的锥形部分上直到第一材料 并且在所述温度下保持硬度的支撑体的第二材料接触生长的单晶的锥形部分。

公开(公告)号：US09932691B2

公开(公告)日：2018-04-03

申请号：US14945840

申请日：2015-11-19

Applicant: Siltronic AG

Inventor： Georg Raming ,  Ludwig Altmannshofer ,  Gundars Ratnieks ,  Martin Moeller ,  Frank Muemmler

IPC: C30B13/26 ,  C30B13/32 ,  C30B13/20 ,  C30B29/06

CPC classification number: C30B13/32 ,  C30B13/20 ,  C30B13/26 ,  C30B29/06

Abstract: A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.

公开(公告)号：US10094042B2

公开(公告)日：2018-10-09

申请号：US14813287

申请日：2015-07-30

Applicant: SILTRONIC AG

Inventor： Kurt Niederer ,  Helmut Teroerde ,  Josef Berger ,  Goetz Meisterernst ,  Frank Muemmler ,  Simon Zitzelsberger

IPC: C30B13/00 ,  C30B13/28 ,  C30B29/06

Abstract: A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.