公开(公告)号：US09932691B2

公开(公告)日：2018-04-03

申请号：US14945840

申请日：2015-11-19

Applicant: Siltronic AG

Inventor： Georg Raming ,  Ludwig Altmannshofer ,  Gundars Ratnieks ,  Martin Moeller ,  Frank Muemmler

IPC: C30B13/26 ,  C30B13/32 ,  C30B13/20 ,  C30B29/06

CPC classification number: C30B13/32 ,  C30B13/20 ,  C30B13/26 ,  C30B29/06

Abstract: A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.