Invention Grant
- Patent Title: Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication
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Application No.: US15583778Application Date: 2017-05-01
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Publication No.: US09941113B2Publication Date: 2018-04-10
- Inventor: Douglas Keil , Ishtak Karim , Yaswanth Rangineni , Adrien LaVoie , Yukinori Sakiyama , Edward Augustyniak , Karl Leeser , Chunhai Ji
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; C23C16/50 ; C23C16/455 ; H01J37/32

Abstract:
Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.
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