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    Metrology Methods to Detect Plasma in Wafer Cavity and Use of the Metrology for Station-to-Station and Tool-to-Tool Matching
    3.
    发明申请
    Metrology Methods to Detect Plasma in Wafer Cavity and Use of the Metrology for Station-to-Station and Tool-to-Tool Matching 有权
    用于检测晶圆间等离子体的计量方法和使用计量站进行工位与工具对刀匹配

    公开(公告)号：US20170076921A1

    公开(公告)日：2017-03-16

    申请号：US14854586

    申请日：2015-09-15

    申请人： Lam Research Corporation

    发明人： Yukinori Sakiyama ,  Yaswanth Rangineni ,  Jeremy Tucker ,  Douglas Keil ,  Edward Augustyniak ,  Sunil Kapoor

    IPC分类号： H01J37/32 ,  H01L21/02 ,  C23C16/52 ,  H01L21/67 ,  C23C16/455 ,  C23C16/50

    CPC分类号： H01J37/32935 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32183 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67253

    摘要： A process chamber for detecting formation of plasma during a semiconductor wafer processing, includes an upper electrode, for providing a gas chemistry to the process chamber. The upper electrode is connected to a radio frequency (RF) power source through a match network to provide RF power to the wafer cavity to generate a plasma. The process chamber also includes a lower electrode for receiving and supporting the semiconductor wafer during the deposition process. The lower electrode is disposed in the process chamber so as to define a wafer cavity between a surface of the upper electrode and a top surface of the lower electrode. The lower electrode is electrically grounded. A coil sensor is disposed at a base of the lower electrode that extends outside the process chamber. The coil sensor substantially surrounds the base of the lower electrode. The coil sensor is configured to measure characteristics of RF current conducting through the wafer cavity. The characteristics of the RF current measured by the coil sensor are used to confirm presence of plasma within the wafer cavity.

    摘要翻译： 一种用于在半导体晶片处理期间检测等离子体的形成的处理室包括用于向处理室提供气体化学物质的上电极。 上电极通过匹配网络连接到射频（RF）电源，以向晶片腔提供RF功率以产生等离子体。 处理室还包括用于在沉积工艺期间接收和支撑半导体晶片的下电极。 下电极设置在处理室中，以便在上电极的表面和下电极的顶表面之间限定晶片空腔。 下电极电接地。 线圈传感器设置在延伸到处理室外部的下电极的底部。 线圈传感器基本上围绕下电极的基部。 线圈传感器被配置为测量通过晶片腔传导的RF电流的特性。 由线圈传感器测量的RF电流的特性用于确认晶片腔内等离子体的存在。

    Mechanical suppression of parasitic plasma in substrate processing chamber
    4.
    发明授权
    Mechanical suppression of parasitic plasma in substrate processing chamber 有权

    公开(公告)号：US11621150B2

    公开(公告)日：2023-04-04

    申请号：US16267932

    申请日：2019-02-05

    申请人： Lam Research Corporation

    发明人： Douglas Keil ,  Edward J. Augustyniak ,  Karl Frederick Leeser ,  Mohamed Sabri

    IPC分类号： H01J37/32 ,  C23C16/455

    摘要： A system includes an electrode. The electrode includes a showerhead having a first stem portion and a head portion. A plurality of dielectric layers is vertically stacked between the electrode and a first surface of a conducting structure. The plurality of dielectric layers includes M dielectric layers arranged adjacent to the head portion and P dielectric portions arranged around the first stem portion. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap, and the third gap are selected to prevent parasitic plasma between the first surface and the electrode.

    SYSTEMS FOR AUTOMATICALLY CHARACTERIZING A PLASMA
    8.
    发明申请
    SYSTEMS FOR AUTOMATICALLY CHARACTERIZING A PLASMA 审中-公开
    用于自动表征等离子体的系统

    公开(公告)号：US20140367042A1

    公开(公告)日：2014-12-18

    申请号：US14462969

    申请日：2014-08-19

    申请人： LAM RESEARCH CORPORATION

    发明人： Douglas Keil ,  Jean-Paul Booth ,  Christopher Thorgrimsson

    IPC分类号： H01J37/32 ,  H01L21/263

    CPC分类号： H01J37/32935 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32926 ,  H01J37/32954 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/327 ,  H01L21/263

    摘要： A system includes a probe arranged in a plasma processing chamber of the plasma processing system. A capacitor has one end connected to the probe. An RF source is configured to selectively supply an RF signal including RF bursts to another end of the capacitor. A plasma characterizing computing device is configured to collect a set of process data from the probe by measuring current supplied to the capacitor and voltage at the capacitor; identify a relevancy range for the set of process data, wherein the relevancy range includes process data collected after the capacitor begins discharging and before the capacitor is fully discharged; determine a set of seed values based on the process data in the relevancy range; and employ the relevancy range and the set of seed values as initial values for curve fitting corresponding to the one of the RF bursts to reduce a number of curve-fitting iterations.

    摘要翻译： 系统包括布置在等离子体处理系统的等离子体处理室中的探针。 电容器的一端连接到探头。 RF源被配置为选择性地将包括RF突发的RF信号提供给电容器的另一端。 等离子体表征计算装置被配置为通过测量提供给电容器的电流和电容器处的电压来从探针收集一组处理数据; 识别该组过程数据的相关范围，其中相关范围包括在电容器开始放电之后并且在电容器完全放电之前收集的处理数据; 基于相关范围内的过程数据确定一组种子值; 并且使用相关范围和种子值集合作为对应于RF突发中的一个的曲线拟合的初始值，以减少曲线拟合迭代的数量。