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公开(公告)号：US20240348223A1
公开(公告)日：2024-10-17
申请号：US18757339
申请日：2024-06-27
发明人： Sunil Kapoor , Aaron Logan , Hyungjoon Kim , Yaswanth Rangineni , Karl Leeser
CPC分类号： H03H1/0007 , H01J37/32183 , H01J37/32724 , H02M1/44 , H01J2237/3321
摘要： A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.
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公开(公告)号：US10923385B2
公开(公告)日：2021-02-16
申请号：US15343159
申请日：2016-11-03
发明人： Karl Leeser
IPC分类号： H01L21/687 , H01L21/683 , C23C16/458 , C23C16/505 , C23C16/50
摘要： A carrier plate for receiving a wafer includes a pocket defined in a middle section on a top surface of the carrier plate and has a surface diameter. The pocket defines a substrate support region. A retaining feature of the carrier plate is defined at an outer edge of the pocket. A tapered portion of the carrier plate extends from the retaining feature to an outer diameter. The tapered portion is configured to receive a focus ring. A bottom surface of the carrier plate is configured to sit over a pedestal that is used in a process chamber. A plurality of wafer supports is disposed on a top surface of the substrate support region to support the wafer, when received.
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公开(公告)号：US10666218B2
公开(公告)日：2020-05-26
申请号：US15961028
申请日：2018-04-24
发明人： Karl Leeser , Sunil Kapoor , Bradford J. Lyndaker
摘要： A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a respective one of a plurality of output terminals. Each of the plurality of output terminals of the matching module is connected to deliver RF signals to a different one of a plurality of plasma processing stations/chambers. Each of the plurality of RF signal delivery branches includes a corresponding inductor and a corresponding variable tuning capacitor electrically connected in a serial manner between its ingress terminal and its egress terminal.
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公开(公告)号：US10577688B2
公开(公告)日：2020-03-03
申请号：US15667980
申请日：2017-08-03
发明人： Adrien LaVoie , Hu Kang , Karl Leeser
IPC分类号： C23C16/455 , C23C16/40 , C23C16/507 , C23C16/509 , C23C16/517
摘要： A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate and supplying a first power level sufficient to promote rearrangement of molecules adsorbed from the reactant gases onto a surface of the substrate. The first power level is supplied in a first predetermined period where the reactant gases are flowing into the process chamber and a second power level is not supplied to the process chamber. The method further includes waiting a second predetermined period subsequent to flowing the reactant gases and supplying the first power level and prior to supplying the second power level to the process chamber and, after the second predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying the second power level to the process chamber for a third predetermined period.
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公开(公告)号：US10312119B2
公开(公告)日：2019-06-04
申请号：US15046214
申请日：2016-02-17
发明人： Karl Leeser
IPC分类号： G05D16/20 , C23C16/455 , H01L21/67
摘要： A line charge volume and methods for use in delivery of gas to a reactor for processing semiconductor wafers is provided. The line charge volume includes a chamber that extends between a first end and a second end, and the first end includes an inlet port and an outlet port. A pressure sensor is integrated with the chamber. The pressure sensor has a measurement side for measuring a deflection of a diaphragm. The diaphragm is directly exposed to an interior of the chamber so that pressure produced by a gas that is provided into the chamber via the inlet port produces a force upon the diaphragm. The measurement side includes electronics for measuring a capacitance value corresponding to the deflection of the diaphragm. The deflection is correlated to a pressure difference, and the pressure difference is equivalent to a pressure volume (Pv) of the chamber.
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6.发明申请公开(公告)号：US20180122685A1
公开(公告)日：2018-05-03
申请号：US15431088
申请日：2017-02-13
发明人： Patrick Breiling , Ramesh Chandrasekharan , Karl Leeser , Paul Konkola , Adrien LaVoie , Chloe Baldasseroni , Shankar Swaminathan , lshtak Karim , Yukinori Sakiyama , Edmund Minshall , Sung Je Kim , Andrew Duvall , Frank Pasquale
IPC分类号： H01L21/687 , H01L21/67 , H01J37/32
CPC分类号： H01L21/68785 , H01J37/32082 , H01J37/32715 , H01J2237/334 , H01L21/67017 , H01L21/68735 , H01L21/68742 , H01L21/68757
摘要： A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.
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公开(公告)号：US20150011096A1
公开(公告)日：2015-01-08
申请号：US13934624
申请日：2013-07-03
IPC分类号： H01L21/67 , C23C16/455 , H01L21/02
摘要： A deposition apparatus for processing semiconductor substrates having an isothermal processing zone comprises a chemical isolation chamber in which semiconductor substrates are processed. A process gas source is in fluid communication with a showerhead module which delivers process gases from the process gas source to the isothermal processing zone wherein the showerhead module includes a faceplate wherein a lower surface of the faceplate forms an upper wall of a cavity defining the isothermal processing zone, a backing plate, and an isolation ring which surrounds the faceplate and the backing plate. At least one compression seal is compressed between the faceplate and the backing plate which forms a central gas plenum between the faceplate and the backing plate. A substrate pedestal module is configured to heat and support a semiconductor substrate wherein an upper surface of the pedestal module forms a lower wall of the cavity defining the isothermal processing zone within the chemical isolation chamber. A vacuum source is in fluid communication with the isothermal processing zone for evacuating process gas from the processing zone.
摘要翻译： 用于处理具有等温处理区域的半导体衬底的沉积装置包括处理半导体衬底的化学隔离室。 工艺气体源与喷头模块流体连通，喷头模块将工艺气体从工艺气体源传送到等温处理区域，其中喷头模块包括面板，其中面板的下表面形成限定等温的空腔的上壁 处理区域，背板和围绕面板和背板的隔离环。 在面板和背板之间压缩至少一个压缩密封件，其在面板和背板之间形成中心气室。 衬底基座模块被配置为加热和支撑半导体衬底，其中基座模块的上表面形成限定化学隔离室内的等温处理区的空腔的下壁。 真空源与等温处理区流体连通，用于从处理区抽真空处理气体。
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公开(公告)号：US20240322781A1
公开(公告)日：2024-09-26
申请号：US18733691
申请日：2024-06-04
发明人： Karl Leeser , Sunil Kapoor , Bradford J. Lyndaker
CPC分类号： H03H7/38 , H01J37/32183
摘要： A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a respective one of a plurality of output terminals. Each of the plurality of output terminals of the matching module is connected to deliver RF signals to a different one of a plurality of plasma processing stations/chambers. Each of the plurality of RF signal delivery branches includes a corresponding inductor and a corresponding variable tuning capacitor electrically connected in a serial manner between its ingress terminal and its egress terminal.
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9.发明授权公开(公告)号：US11443975B2
公开(公告)日：2022-09-13
申请号：US16836062
申请日：2020-03-31
发明人： Patrick Breiling , Ramesh Chandrasekharan , Karl Leeser , Paul Konkola , Adrien LaVoie , Chloe Baldasseroni , Shankar Swaminathan , Ishtak Karim , Yukinori Sakiyama , Edmund Minshall , Sung Je Kim , Andrew Duvall , Frank Pasquale
IPC分类号： H01L21/687 , H01L21/67 , H01J37/32 , C23C16/458 , B05C13/02
摘要： A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.
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10.发明申请公开(公告)号：US20220139670A1
公开(公告)日：2022-05-05
申请号：US17573607
申请日：2022-01-11
发明人： Hyungjoon Kim , Sunil Kapoor , Karl Leeser , Vince Burkhart
IPC分类号： H01J37/32 , H01L21/683 , C23C16/505
摘要： An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The isolation system further includes a plurality of channel paths connected to the input junction for distributing the RF power among the channel paths. The isolation system includes an output junction connected between each of the channel paths and to an electrode of a plasma chamber for receiving portions of the distributed RF power to output combined power and providing the combined RF power to the electrode. Each of the channel paths includes bottom and top capacitors for blocking a signal of the different type than that of the RF power. The isolation system avoids a risk of electrical arcing created by a voltage difference between an RF terminal and a non-RF terminal when the terminals are placed proximate to each other.
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