公开(公告)号：US10978302B2

公开(公告)日：2021-04-13

申请号：US15974172

申请日：2018-05-08

Applicant: Lam Research Corporation

Inventor： Ishtak Karim ,  Pulkit Agarwal ,  Joseph Abel ,  Purushottam Kumar ,  Adrien Lavoie

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/02 ,  H01L21/027

Abstract: A method for forming features over a wafer with a carbon based deposition is provided. The carbon based deposition is pretuned, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition. An oxide deposition of a silicon oxide based material is deposited through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition, which is complementary to the non-uniform removal of some of the carbon based deposition by the pretuning.

公开(公告)号：US10202691B2

公开(公告)日：2019-02-12

申请号：US15636128

申请日：2017-06-28

Applicant: Lam Research Corporation

Inventor： Ishtak Karim ,  Adrien LaVoie

IPC: H01L21/00 ,  C23C16/52 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  H01L21/02 ,  C23C16/44 ,  C23C16/509 ,  H01J37/32 ,  H01L21/66

Abstract: Disclosed are methods of and systems for depositing a film. The methods may include: (a) determining process conditions, including a flow condition of a curtain gas that flows around the periphery of each station in the chamber, for performing film deposition in the chamber, (b) flowing the curtain gas to each station in the chamber during film deposition according to the process conditions determined in (a), (c) determining, during or after (b), an adjusted flow condition of the curtain gas in the chamber to improve substrate nonuniformity, and (d) flowing, after (c), the curtain gas during film deposition according to the adjusted flow condition determined in (c). The systems may include a gas delivery system, a processing chamber, and a controller having control logic for performing one or more of (a)-(d).

公开(公告)号：US10037884B2

公开(公告)日：2018-07-31

申请号：US15253301

申请日：2016-08-31

Applicant: Lam Research Corporation

Inventor： Fung Suong Ou ,  Purushottam Kumar ,  Adrien LaVoie ,  Ishtak Karim ,  Jun Qian

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/0228 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32

Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film.

公开(公告)号：US20150163860A1

公开(公告)日：2015-06-11

申请号：US14098860

申请日：2013-12-06

Applicant: Lam Research Corporation

Inventor： Vincent E. Burkhart ,  Yorkman Ma ,  Martin E. Freeborn ,  Ishtak Karim

IPC: H05B3/00 ,  H01L21/324 ,  G02B19/00 ,  H01L21/683

CPC classification number: H05B3/0047 ,  G02B19/0023 ,  G02B19/009 ,  H01L21/67115 ,  H01L21/67201

Abstract: A technique and apparatus are provided for supplying substantially uniform radiant heat energy to a semiconductor wafer in a load lock or process chamber using a light source and a set of radially-symmetric reflectors.

Abstract translation: 提供了一种技术和装置，用于使用光源和一组径向对称反射器，在负载锁或处理室中的半导体晶片上提供基本均匀的辐射热能。

公开(公告)号：US20250062150A1

公开(公告)日：2025-02-20

申请号：US18933382

申请日：2024-10-31

Applicant: Lam Research Corporation

Inventor： Patrick Girard Breiling ,  Michael Philip Roberts ,  Chloe Baldasseroni ,  Ishtak Karim ,  Adrien LaVoie ,  Ramesh Chandrasekharan

IPC: H01L21/683 ,  C23C16/458 ,  H01J37/32 ,  H01L21/687

Abstract: Apparatuses and systems for pedestals are provided. An example pedestal may have a body with an upper annular seal surface that is planar, perpendicular to a vertical center axis of the body, and has a radial thickness, a lower recess surface offset from the upper annular seal surface, and a plurality of micro-contact areas (MCAs) protruding from the lower recess surface, each MCA having a top surface offset from the lower recess surface by a second distance less, and one or more electrodes within the body. The upper annular seal surface may be configured to support an outer edge of a semiconductor substrate when the semiconductor substrate is being supported by the pedestal, and the upper annular seal surface and the tops of the MCAs may be configured to support the semiconductor substrate when the semiconductor substrate is being supported by the pedestal.

公开(公告)号：US11443975B2

公开(公告)日：2022-09-13

申请号：US16836062

申请日：2020-03-31

Applicant: Lam Research Corporation

Inventor： Patrick Breiling ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Paul Konkola ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Shankar Swaminathan ,  Ishtak Karim ,  Yukinori Sakiyama ,  Edmund Minshall ,  Sung Je Kim ,  Andrew Duvall ,  Frank Pasquale

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  C23C16/458 ,  B05C13/02

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

公开(公告)号：US10128160B2

公开(公告)日：2018-11-13

申请号：US15818223

申请日：2017-11-20

Applicant: Lam Research Corporation

Inventor： Yukinori Sakiyama ,  Ishtak Karim ,  Yaswanth Rangineni ,  Adrien LaVoie ,  Ramesh Chandrasekharan ,  Edward Augustyniak ,  Douglas Keil

IPC: B05C11/00 ,  H01L21/66 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/458 ,  H01L21/263 ,  H01L21/683 ,  C23C16/50 ,  C23C16/52 ,  C23C16/455 ,  C23C16/509 ,  H01L21/02

Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. At least one electrical sensor connected to the electrode measures a radiofrequency parameter on the electrode during each of the multiple sequential plasma processing cycles. A value of the radiofrequency parameter as measured on the electrode is determined for each of the multiple sequential plasma processing cycles. A determination is made as to whether or not any indicatory trend or change exists in the values of the radiofrequency parameter as measured on the electrode over the multiple sequential plasma processing cycles, where the indicatory trend or change indicates formation of a plasma instability during the plasma processing operation.

公开(公告)号：US20180323057A1

公开(公告)日：2018-11-08

申请号：US16034022

申请日：2018-07-12

Applicant: Lam Research Corporation

Inventor： Purushottam Kumar ,  Adrien LaVoie ,  Ishtak Karim ,  Jun Qian ,  Frank L. Pasquale ,  Bart J. van Schravendijk

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/04 ,  C23C16/511 ,  C23C16/509 ,  C23C16/52 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  H01J37/32 ,  C23C16/505

Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation.

公开(公告)号：US10094018B2

公开(公告)日：2018-10-09

申请号：US14929073

申请日：2015-10-30

Applicant: Lam Research Corporation

Inventor： Purushottam Kumar ,  Adrien LaVoie ,  Jun Qian ,  Hu Kang ,  Ishtak Karim ,  Fung Suong Ou

IPC: C23C16/455 ,  H01L21/285 ,  H01L21/02 ,  C23C16/52

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

公开(公告)号：US10062563B2

公开(公告)日：2018-08-28

申请号：US15201221

申请日：2016-07-01

Applicant: Lam Research Corporation

Inventor： Purushottam Kumar ,  Adrien LaVoie ,  Ishtak Karim ,  Jun Qian ,  Frank L. Pasquale ,  Bart J. van Schravendijk

IPC: H01L21/02 ,  C23C16/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/52 ,  C23C16/509 ,  H01J37/32 ,  C23C16/511

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/325 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/505 ,  C23C16/509 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274

Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation.