公开(公告)号：US11823928B2

公开(公告)日：2023-11-21

申请号：US17515261

申请日：2021-10-29

Applicant: Lam Research Corporation

Inventor： Edward Augustyniak ,  David French ,  Sunil Kapoor ,  Yukinori Sakiyama ,  George Thomas

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/67288 ,  H01J37/32183 ,  H01J37/32385 ,  H01J37/32577 ,  H01J37/32715 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67253 ,  H01L21/67259 ,  H01L21/68771 ,  H01J2237/3321

Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

公开(公告)号：US20230246624A1

公开(公告)日：2023-08-03

申请号：US18131341

申请日：2023-04-05

Applicant: Lam Research Corporation

Inventor： Yaswanth Rangineni ,  Sunil Kapoor ,  Edward Augustyniak ,  Yukinori Sakiyama

IPC: H03H7/38 ,  H01J37/32 ,  C23C16/458 ,  C23C16/455 ,  C23C16/505

CPC classification number: H03H7/38 ,  H01J37/32183 ,  H01J37/32899 ,  C23C16/4583 ,  H01J37/32091 ,  H01J37/32174 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/505

Abstract: Systems and methods for negating an impedance associated with parasitic capacitance are described. One of the systems includes a plasma chamber having a housing. The housing includes a pedestal, a showerhead situated above the pedestal to face the pedestal, and a ceiling located above the showerhead. The system further includes a radio frequency (RF) transmission line coupled to the plasma chamber for transferring a modified RF signal to the showerhead. The system includes a shunt circuit coupled within a pre-determined distance from the ceiling. The shunt circuit is coupled to the RF transmission line for negating the impedance associated with the parasitic capacitance within the housing.

公开(公告)号：US10378107B2

公开(公告)日：2019-08-13

申请号：US14850816

申请日：2015-09-10

Applicant: Lam Research Corporation

Inventor： Ramesh Chandrasekharan ,  Saangrut Sangplung ,  Shankar Swaminathan ,  Frank Pasquale ,  Hu Kang ,  Adrien LaVoie ,  Edward Augustyniak ,  Yukinori Sakiyama ,  Chloe Baldasseroni ,  Seshasayee Varadarajan ,  Basha Sajjad ,  Jennifer L. Petraglia

IPC: C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  C23C16/455

Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

公开(公告)号：US09997422B2

公开(公告)日：2018-06-12

申请号：US15089960

申请日：2016-04-04

Applicant: Lam Research Corporation

Inventor： Ishtak Karim ,  Yukinori Sakiyama ,  Yaswanth Rangineni ,  Edward Augustyniak ,  Douglas Keil ,  Ramesh Chandrasekharan ,  Adrien LaVoie ,  Karl Leeser

IPC: H05H1/24 ,  H01L21/66 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/458 ,  H01L21/263 ,  H01L21/683 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02 ,  C23C16/455 ,  C23C16/509

CPC classification number: H01L22/20 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/683 ,  H01L22/12

Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency signals of a first signal frequency are supplied to the plasma generation region to generate a plasma within the plasma generation region. Formation of a plasma instability is detected within the plasma based on supply of the radiofrequency signals of the first signal frequency. After detecting formation of the plasma instability, radiofrequency signals of a second signal frequency are supplied to the plasma generation region in lieu of the radiofrequency signals of the first signal frequency to generate the plasma. The second signal frequency is greater than the first signal frequency and is set to cause a reduction in ion energy within the plasma and a corresponding reduction in secondary electron emission from the wafer caused by ion interaction with the wafer.

公开(公告)号：US09953887B2

公开(公告)日：2018-04-24

申请号：US15130176

申请日：2016-04-15

Applicant: Lam Research Corporation

Inventor： Boaz Kenane ,  Edward Augustyniak

IPC: G01R31/26 ,  H01L21/66 ,  C23C16/52 ,  H01L21/67

CPC classification number: H01L22/26 ,  C23C16/52 ,  H01L21/67253 ,  H01L22/12

Abstract: In situ wafer metrology is conducted to reliably obtain deposition thickness for each successive layer in a multi-layer deposition. A wafer to be processed is positioned in a processing station of a deposition process tool, the process tool having a reflectometer metrology apparatus for optically determining thickness of a deposited layer on the wafer. Prior to commencing a deposition, the wafer is aligned in the processing station such that an optical metrology spot generated by the reflectometer metrology apparatus will align with an unpatterned central region of a die on a wafer during a deposition conducted on the wafer in the tool. Thereafter, the thickness of a deposited layer on the wafer is reliably measured and monitored in situ.

公开(公告)号：US09941113B2

公开(公告)日：2018-04-10

申请号：US15583778

申请日：2017-05-01

Applicant: Lam Research Corporation

Inventor： Douglas Keil ,  Ishtak Karim ,  Yaswanth Rangineni ,  Adrien LaVoie ,  Yukinori Sakiyama ,  Edward Augustyniak ,  Karl Leeser ,  Chunhai Ji

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/45525 ,  C23C16/50 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32128 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/0228

Abstract: Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.

公开(公告)号：US09644271B1

公开(公告)日：2017-05-09

申请号：US15154715

申请日：2016-05-13

Applicant: Lam Research Corporation

Inventor： Douglas Keil ,  Ishtak Karim ,  Yaswanth Rangineni ,  Adrien LaVoie ,  Yukinori Sakiyama ,  Edward Augustyniak ,  Karl Leeser ,  Chunhai Ji

IPC: H01L21/00 ,  C23C16/513 ,  H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/45525 ,  C23C16/50 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32128 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/0228

Abstract: Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.

公开(公告)号：US20240055285A1

公开(公告)日：2024-02-15

申请号：US18494710

申请日：2023-10-25

Applicant: Lam Research Corporation

Inventor： Edward Augustyniak ,  David French ,  Sunil Kapoor ,  Yukinori Sakiyama ,  George Thomas

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/67288 ,  H01L21/67259 ,  H01L21/67253 ,  H01L21/67207 ,  H01L21/67069 ,  H01L21/67167 ,  H01J37/32183 ,  H01L21/68771 ,  H01J37/32385 ,  H01J37/32935 ,  H01J37/32577 ,  H01L21/67201 ,  H01J37/32715 ,  H01J2237/3321

Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

公开(公告)号：US11127567B2

公开(公告)日：2021-09-21

申请号：US16866065

申请日：2020-05-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Hu Kang ,  Adrien LaVoie ,  Shankar Swaminathan ,  Jun Qian ,  Chloe Baldasseroni ,  Frank Pasquale ,  Andrew Duvall ,  Ted Minshall ,  Jennifer Petraglia ,  Karl Leeser ,  David Smith ,  Sesha Varadarajan ,  Edward Augustyniak ,  Douglas Keil

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/509

Abstract: A substrate processing system includes: a processing chamber defining a reaction volume; a showerhead including: a stem portion having one end connected adjacent to an upper surface of the processing chamber; and a base portion connected to an opposite end of the stem portion and extending radially outwardly from the stem portion, where the showerhead is configured to introduce gas into the reaction volume; a plasma generator configured to selectively generate RF plasma in the reaction volume; and a collar arranged around the stem portion of the showerhead between the base portion of the showerhead and the upper surface of the processing chamber. The collar includes one or more holes to supply purge gas from an inner cavity of the collar to between the base portion of the showerhead and the upper surface of the processing chamber.

公开(公告)号：US10187032B2

公开(公告)日：2019-01-22

申请号：US15254769

申请日：2016-09-01

Applicant: Lam Research Corporation

Inventor： Sunil Kapoor ,  George Thomas ,  Yaswanth Rangineni ,  Edward Augustyniak

IPC: H03H7/40 ,  C23C16/505 ,  C23C16/52 ,  C23C16/458

Abstract: Systems and methods for adjusting impedances or power or a combination thereof across multiple plasma processing stations are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal having a first frequency, a second RF generator that generates a second RF signal having a second frequency, and a first matching network coupled to the first RF generator to receive the first RF signal. The first impedance matching network outputs a first modified RF signal upon receiving the first RF signal. The system further includes a second matching network coupled to the second RF generator to receive the second RF signal. The second matching network outputs a second modified RF signal upon receiving the second RF signal. The system further includes a combiner and distributor coupled to an output of the first matching network and an output of the second matching network.