摘要:
A transition (38) is provided for interfacing a coplanar waveguide (16) with a three dimensional microwave waveguide (28). The transition includes three coplanar conductors (42, 46, 48) that are formed integrally with and extend from the coplanar waveguide. The transition extends into the microwave waveguide through a slot (34), with the plane of the transition being perpendicular to the direction of propagation (32) of the electric field in the waveguide. The center conductor of the transition is a patch (42) whose width increases. The other two conductors (46, 48) are attached to the side conductors (20, 22) of the coplanar waveguide and to the exterior (30) of the waveguide. They flank the patch and have curved edges (56, 60) complementary to those (54,58) of the patch. The gaps (50, 52) are initially narrow, and become wider gradually. Further, as each guide steers the electric field while changing direction by 90°, it rotates the orientation of the electric field vector by the same amount.
摘要:
A means of connecting a plurality of essentially identical active devices (Q1, Q2, Q3, Q4) is presented for the purpose of multifunction and multiple function operation. These devices (Q1, Q2, Q3, Q4), mounted on a chip (66), are flip-mounted to a circuit motherboard having large passive elements. A push-pull amplifier (50) is presented as an example in which the multiple function operation is the combining of amplifiers (56, 58) whose active devices (Q1, Q2, Q3, Q4) are on a single chip (66). The electromagnetic coupling, impedance matching and signal transmission are variously provided by the use of striplines (82, 88), slotlines (94, 100), coplanar waveguides (116, 130), and a slotline (180) converted into a coplanar waveguide (176, 178).
摘要:
A means of connecting a plurality of essentially identical active devices (Q1, Q2, Q3, Q4) is presented for the purpose of multifunction and multiple function operation. These devices (Q1, Q2, Q3, Q4), mounted on a chip (66), are flip-mounted to a circuit motherboard having large passive elements. A push-pull amplifier (50) is presented as an example in which the multiple function operation is the combining of amplifiers (56, 58) whose active devices (Q1, Q2, Q3, Q4) are on a single chip (66). The electromagnetic coupling, impedance matching and signal transmission are variously provided by the use of striplines (82, 88), slotlines (94, 100), coplanar waveguides (116, 130), and a slotline (180) converted into a coplanar waveguide (176, 178). In particular, a conversion of a split coplanar slotline (170) to dual coplanar waveguides (176, 178) provides signal transmission to a pair of transistors (166) flip-mounted onto the coplanar waveguides (176, 178).
摘要:
Two pairs of field effect transistors (FETs) (22U and 22L and 24U and 24L) are mounted in registration on both faces (12a and 12b) of a dual-sided dielectric substrate (12). The sources (22US and 22 LS and 24US and 24LS) on both faces of the FETs (22 and 24) are electrically coupled and are located at a minimum distance from their mates on the opposite faces of the substrate (12) to reduce inter-FET source lead inductance. The FETs (22 and 24) are coupled to a set of conductors (16a, 16b, 16c and 16d) which are formed on the substrate (12). These conductors (16a, 16b, 16c and 16d) are deployed in a substantially symmetric pattern about the active devices (14d and 14e) as opposing pairs in registration across the substrate (12), and are located in positions that are substantially equidistant from the active devices (14d and 14e).
摘要:
An amplifier (100) including an amplifiying transistor (150) flip-mounted on a coplanar waveguide pattern. Elements of stability and/or matching circuits are provided at least in part under the flip-mounted transistor to facilitate compact design and to improve component performance. A serial resistor-shunt inductor pair (120, 160) is provided with the resistor coupled proximate the transistor input and/or output and preferably configured within the CPW center conductor (102) to produce more consistent component values. Adjustable impedance matching means (110) are also taught.
摘要:
An active device, such as a field effect transistor ("FET") or MMIC, converts microwave signals between a microstrip transmission line ("microstrip") and a coplanar wave guide ("CPW"). In microstrip-to-CPW conversion using a simple FET, a gate connection is made to the microstrip signal conductor. A drain connection is made to the center conductor on the CPW. Two FET source terminals are connected respectively to each CPW ground strip. The ground strips are electrically coupled to the microstrip ground plane with a minimum length connection so the inductance common to the FET input and output is minimized. The FET can be reconnected so as to reverse the input and output, providing for conversion of signals from CPW to microstrip. Conversion from microstrip to an intermediate CPW and back to microstrip provides for mounting an intermediate circuit, such as an amplifier or other MMIC, directly on the CPW.
摘要:
An active device, such as a field effect transistor ("FET") or MMIC, converts microwave signals between a microstrip transmission line ("microstrip") and a coplanar wave guide ("CPW"). In microstrip-to-CPW conversion using a simple FET, a gate connection is made to the microstrip signal conductor. A drain connection is made to the center conductor on the CPW. Two FET source terminals are connected respectively to each CPW ground strip. The ground strips are electrically coupled to the microstrip ground plane with a minimum length connection so the inductance common to the FET input and output is minimized. The FET can be reconnected so as to reverse the input and output, providing for conversion of signals from CPW to microstrip. Conversion from microstrip to an intermediate CPW and back to microstrip provides for mounting an intermediate circuit, such as an amplifier or other MMIC, directly on the CPW.
摘要:
Lossy resistive films (220, 220') and longitudinally extending coplanar conductors (206, 210) of a radio frequency transmission line are defined on the planar surface (204) of an insulating substrate (202). The resistive films (220, 220') may be positioned away from or in the space between parallel conductors (206, 210). The coplanar conductors may be configured as a two conductor coplanar slotline (206, 210) or as part of a three conductor coplanar wave guide (206, 210, 230). The resistive film (338) may also be extended (sea of resistor) over otherwise unused portions of the substrate. Still another embodiment provides a signal attenuating coplanar resistive structure (350) between a coplanar signal conductor (356) and a coplanar ground conductor (370). The coplanar resistive structure (400, 500) may include a meandering, or serpentine conductor (510) or interdigitated comb-like resistive film fingers (412a, 416).
摘要:
A transition (38) is provided for interfacing a coplanar waveguide (16) with a three dimensional microwave waveguide (28). The transition includes three coplanar conductors (42, 46, 48) that are formed integrally with and extend from the coplanar waveguide. The transition extends into the microwave waveguide through a slot (34), with the plane of the transition being perpendicular to the direction of propagation (32) of the electric field in the waveguide. The center conductor of the transition is a patch (42) whose width increases. The other two conductors (46, 48) are attached to the side conductors (20, 22) of the coplanar waveguide and to the exterior (30) of the waveguide. They flank the patch and have curved edges (56, 60) complementary to those (54,58) of the patch. The gaps (50, 52) are initially narrow, and become wider gradually. Further, as each guide steers the electric field while changing direction by 90°, it rotates the orientation of the electric field vector by the same amount.
摘要:
An active device (16), such as a field effect transistor ('FET') (70), converts microwave signals between a slot transmission line ('slotline') (12) and a coplanar waveguide ('CPW') (14). In slotline-to-CPW conversion using one or more FETs, a gate connection is made to one or both of the slotline conductors (18, 20). A drain connection is made to the center conductor (22) on the CPW. Two FET source terminals are connected respectively to each CPW groun strip (24, 26) and may be coupled to a slotline conductor (20). The active device (32) can be reconnected so as to reverse the input and output, providing for conversion of signals from CPW (34) to slotline (36). Conversion between balanced-signal slotline (82) and CPW (84) further includes passive (94) or active (172) phase shift of one signal path.