公开(公告)号：EP3103567A4

公开(公告)日：2017-11-01

申请号：EP14881854

申请日：2014-02-04

Applicant: SENJU METAL INDUSTRY CO

Inventor： KAWASAKI HIROYOSHI ,  ROPPONGI TAKAHIRO ,  SOMA DAISUKE ,  SATO ISAMU

IPC: B22F1/00 ,  B22F1/02 ,  B22F9/08 ,  B22F9/14 ,  B23K1/00 ,  B23K1/008 ,  B23K3/06 ,  B23K35/02 ,  B23K35/14 ,  B23K35/30 ,  B23K101/42 ,  C22C9/00 ,  C22C19/03 ,  C22F1/08 ,  C22F1/10 ,  H01L21/60 ,  H01L23/00 ,  H01L23/498 ,  H01L23/556 ,  H05K3/34

CPC classification number: B23K35/0244 ,  B22F1/0003 ,  B22F1/0048 ,  B22F1/025 ,  B22F9/08 ,  B22F9/082 ,  B22F9/14 ,  B22F2009/0848 ,  B22F2301/10 ,  B22F2301/15 ,  B22F2998/10 ,  B22F2999/00 ,  B23K1/0016 ,  B23K1/008 ,  B23K3/0623 ,  B23K35/302 ,  B23K35/3033 ,  B23K2201/42 ,  C22C9/00 ,  C22C19/03 ,  C22F1/08 ,  C22F1/10 ,  H01L23/49816 ,  H01L23/556 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13117 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13124 ,  H01L2224/13138 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13149 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/1316 ,  H01L2224/13163 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13172 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13179 ,  H01L2224/1318 ,  H01L2224/13181 ,  H01L2224/13183 ,  H01L2224/13184 ,  H01L2224/132 ,  H01L2224/13211 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13305 ,  H01L2224/13309 ,  H01L2224/13317 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13323 ,  H01L2224/13324 ,  H01L2224/13338 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13349 ,  H01L2224/13355 ,  H01L2224/13357 ,  H01L2224/1336 ,  H01L2224/13363 ,  H01L2224/13364 ,  H01L2224/13366 ,  H01L2224/13369 ,  H01L2224/1337 ,  H01L2224/13371 ,  H01L2224/13372 ,  H01L2224/13373 ,  H01L2224/13376 ,  H01L2224/13378 ,  H01L2224/13379 ,  H01L2224/1338 ,  H01L2224/13381 ,  H01L2224/13383 ,  H01L2224/13384 ,  H01L2224/1339 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/1369 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2924/381 ,  H01L2924/3841 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2203/041 ,  H01L2924/01092 ,  H01L2924/0109 ,  B22F2202/13 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0106 ,  H01L2924/01032 ,  H01L2924/01049 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2924/01071 ,  H01L2924/01051 ,  H01L2924/01069 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01026 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/01059 ,  H01L2924/01079 ,  H01L2924/01067 ,  H01L2924/01066 ,  H01L2924/01065 ,  H01L2924/01064 ,  H01L2924/01061 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/0102 ,  H01L2924/01063 ,  H01L2924/0107 ,  H01L2924/01058 ,  H01L2924/00014 ,  H01L2924/01038 ,  H01L2924/01056 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01043 ,  H01L2924/01083 ,  H01L2924/0103 ,  H01L2924/01048 ,  H01L2924/01052 ,  H01L2924/01004 ,  H01L2924/01016 ,  H01L2924/01076 ,  H01L2924/01013 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2924/01025

Abstract: Produced is a metal ball which suppresses an emitted ± dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

公开(公告)号：EP2299496A3

公开(公告)日：2016-08-24

申请号：EP10176519.6

申请日：2010-09-14

Applicant: Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V.

Inventor： Metz, DR., Axel ,  Bagus, Stefan ,  Dauwe, DR., Stefan ,  Droste, Tobias ,  Roth, Peter ,  Teppe, Andreas

IPC: H01L31/0224 ,  H01L31/18 ,  H01L21/268 ,  B23K26/40 ,  H01L21/60 ,  H01L23/488 ,  B23K26/06 ,  H01L31/068

CPC classification number: H01L31/186 ,  H01L21/268 ,  H01L24/03 ,  H01L24/05 ,  H01L31/022425 ,  H01L2224/05073 ,  H01L2224/05624 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  Y02E10/50 ,  Y02P70/521

Abstract: Die Erfindung bezieht sich auf ein Verfahren zum Ausbilden zumindest eines lokalen Kontaktbereichs eines Substrats eines elektrischen Bauelementes zum Kontaktieren des Kontaktbereichs mit einem Verbinder, wobei das Substrat kontaktseitig mit einer aus Metall bestehenden oder Metall enthaltenden porösen Schicht versehen ist. Um einen mechanisch haltbaren elektrisch einwandfrei lötbaren Kontaktbereich zur Verfügung zu stellen, wird vorgeschlagen, dass die poröse Schicht in dem auszubildenden Kontaktbereich verdichtet und/oder entfernt wird.

公开(公告)号：EP1900022B1

公开(公告)日：2015-10-07

申请号：EP06786247.4

申请日：2006-06-30

Applicant: Vishay-Siliconix

Inventor： Owyang, King ,  Kuo, Frank ,  Kuo, Sam ,  Kasem, Mohammed ,  Mao, Sen ,  Bai, Yuming

IPC: H01L25/16 ,  H01L23/495

CPC classification number: G05F3/08 ,  H01L23/36 ,  H01L23/49861 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/16 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0106 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H02M3/00 ,  H02M3/04 ,  H05K1/0206 ,  H05K1/0218 ,  H05K1/141 ,  H05K1/181 ,  H05K3/202 ,  H05K3/284 ,  H05K3/3436 ,  H05K7/20409 ,  H05K7/205 ,  H05K2201/10166 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

公开(公告)号：EP2293324A4

公开(公告)日：2014-09-10

申请号：EP09769870

申请日：2009-06-18

Applicant: PANASONIC CORP

Inventor： SASAOKA TATSUO ,  TOYODA KAORI ,  NISHIWAKI KENTARO ,  IKEUCHI HIROKI ,  NASU HIROSHI

IPC: H01L21/60 ,  H01B1/22 ,  H01L21/52 ,  H01L21/56 ,  H01L23/00 ,  H01L31/024 ,  H01L33/00 ,  H01L33/62 ,  H01L33/64 ,  H05K3/32 ,  H05K3/40

CPC classification number: H01L33/62 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/025 ,  H01L21/563 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L31/024 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/16225 ,  H01L2224/29076 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8314 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83207 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/351 ,  H05K3/321 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/10106 ,  H05K2201/10166 ,  H05K2201/2036 ,  H05K2203/1131 ,  H05K2203/1178 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01014 ,  H01L2224/29298 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2924/00014

Abstract: A mounting structure is provided that can allow gaseous matter generated when performing a heat treatment to escape to outside efficiently. A mounting structure 10 includes a substrate 1 having electrodes 2a and 2b, an electronic component 3 having electrodes 21a and 21b, joints 15a and 15b that electrically connect the electrodes 2a and 2b of the substrate 1 and the electrodes 21a and 21b of the electronic component 3 and also fix the electronic component 3 to the surface of the substrate 1, and a convex portion 4 that abuts against the electrode 2a of the substrate 1 and the electrode 21 a of the electronic component 3 and is used as a spacer.

公开(公告)号：EP1580800B1

公开(公告)日：2014-06-04

申请号：EP03812274.3

申请日：2003-09-11

Applicant: HAMAMATSU PHOTONICS K. K.

Inventor： FUKUYO, Fumitsugu, Hamamatsu Photonics K.K. ,  FUKUMITSU, Kenshi, Hamamatsu Photonics K.K. ,  UCHIYAMA, Naoki, Hamamatsu Photonics K.K. ,  SUGIURA, Ryuji, Hamamatsu Photonics K.K.

IPC: H01L21/301 ,  B28D5/00 ,  B23K26/40 ,  B23K101/40 ,  B23K26/00

CPC classification number: H01L21/2633 ,  B23K26/0057 ,  B23K26/0853 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

Abstract: Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

公开(公告)号：EP2216805B1

公开(公告)日：2014-04-02

申请号：EP10005697.7

申请日：2003-09-11

Applicant: Hamamatsu Photonics K.K.

Inventor： Fukuyo, Fumitsugu ,  Fukumitsu, Kenshi ,  Uchiyama, Naoki ,  Sugiura, Ryuji

IPC: H01L21/301 ,  B28D5/00 ,  B23K26/38 ,  B23K101/40 ,  B23K26/08 ,  B23K26/40

CPC classification number: H01L21/2633 ,  B23K26/0057 ,  B23K26/0853 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

Abstract: Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

公开(公告)号：EP2239764B1

公开(公告)日：2013-11-06

申请号：EP10007917.7

申请日：2003-09-11

Applicant: Hamamatsu Photonics K.K.

Inventor： Fukuyo, Fumitsugu ,  Fukumitsu, Kenshi ,  Uchiyama, Naoki ,  Sugiura, Ryuji

IPC: H01L21/301 ,  B28D1/22 ,  B23K26/40 ,  B23K101/40

CPC classification number: H01L21/2633 ,  B23K26/0057 ,  B23K26/0853 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

Abstract: Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

公开(公告)号：EP2647269A1

公开(公告)日：2013-10-09

申请号：EP11794257.3

申请日：2011-12-02

Applicant: Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO

Inventor： VAN DEN BRAND, Jeroen ,  KUSTERS, Roel Henry Louis ,  DIETZEL, Andreas Heinrich

IPC: H05K3/32 ,  H01L23/00

CPC classification number: H05K3/32 ,  H01L23/4985 ,  H01L24/24 ,  H01L24/76 ,  H01L24/82 ,  H01L2224/2405 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/25171 ,  H01L2224/25175 ,  H01L2224/76155 ,  H01L2224/76261 ,  H01L2224/766 ,  H01L2224/767 ,  H01L2224/82102 ,  H01L2224/82104 ,  H01L2224/82106 ,  H01L2224/82874 ,  H01L2224/9202 ,  H01L2224/92144 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K1/0283 ,  H05K1/189 ,  H05K3/12 ,  H05K3/305 ,  H05K2201/10674 ,  H05K2203/107 ,  H05K2203/1469 ,  H05K2203/1545 ,  H05K2203/175 ,  Y10T29/49133 ,  Y10T29/53178 ,  H01L2924/00

Abstract: A method is presented for assembling a component (30) with a flexible substrate (10), the component having electric contacts (31). The method comprises the steps of - placing the component (30) on a first main side (11) of the substrate, - applying a machine vision step to estimate a position of the electric contacts, - depositing one or more layers (32) of an electrically conductive material or a precursor thereof, said layer extending over an area of the substrate defined by the component to laterally beyond said area, - calculating partitioning lines depending on the estimated position of the electric contacts, - partitioning the layer into mutually insulated areas (32d) by locally removing material from said layer along said partitioning lines. Also an apparatus is presented that is suitable for carrying out the method. In addition an assembly is present that can be obtained by the method and the apparatus according to the invention.

公开(公告)号：EP2043168B1

公开(公告)日：2013-09-18

申请号：EP09150595.8

申请日：2002-01-24

Applicant: Nichia Corporation

Inventor： Sakano, Kensho ,  Sakai, Kazuhiko ,  Okada, Yuji ,  Umezu, Toshihiko

IPC: H01L33/00 ,  C08G59/24 ,  C08G59/42 ,  C09K11/00

CPC classification number: C08L63/00 ,  B29C67/08 ,  C09K11/02 ,  C09K11/7774 ,  H01L24/45 ,  H01L24/97 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/508 ,  H01L33/54 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01087 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/20753 ,  H01L2924/00012

Abstract: A light emitting diode comprising an LED chip having a light emitting layer made of a nitride compound semiconductor and a light transmitting resin that includes a fluorescent material which absorbs at least a part of light emitted by the LED chip and emits light of a different wavelength, wherein the fluorescent material includes a fluorescent particles of small particle size and a fluorescent particles of large particle size, the fluorescent particles of large particle size being distributed in the vicinity of the LED chip in the light transmitting resin to form a wavelength converting layer, the fluorescent particles of small particle size being distributed on the outside of the wavelength converting layer in the light transmitting resin.

公开(公告)号：EP1047124B1

公开(公告)日：2012-12-26

申请号：EP00108457.3

申请日：2000-04-18

Applicant: Sony Chemical & Information Device Corporation

Inventor： Akutsu, Yasushi, c/o Sony Chemicals Corporation

IPC: H01L21/58

CPC classification number: H01L24/83 ,  H01L24/29 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/8319 ,  H01L2224/83855 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299