公开(公告)号：EP3677585A1

公开(公告)日：2020-07-08

申请号：EP18850439.3

申请日：2018-08-09

申请人： Adeka Corporation

发明人： OKADA, Nana ,  HATASE, Masako ,  NISHIDA, Akihiro ,  SAKURAI, Atsushi

IPC分类号： C07F5/00 ,  C23C16/18 ,  H01L21/31

摘要： The present invention provides a metal alkoxide compound represented by the following general formula (1), a thin-film-forming raw material containing the same, and a thin film production method of forming a metal-containing thin film using the raw material:

wherein R 1 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, R 2 represents an isopropyl group, a sec-butyl group, a tert-butyl group, a sec-pentyl group, a 1-ethylpropyl group or a tert-pentyl group, R 3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, R 4 represents an alkyl group having 1 to 4 carbon atoms, M represents a scandium atom, an yttrium atom, a lanthanum atom, a cerium atom, a praseodymium atom, a neodymium atom, a promethium atom, a samarium atom, a europium atom, a gadolinium atom, a terbium atom, a dysprosium atom, a holmium atom, an erbium atom, a thulium atom, an ytterbium atom or a lutetium atom, and n represents the valence of the atom represented by M; here, when M is a lanthanum atom, R 2 is a sec-butyl group, a tert-butyl group, a sec-pentyl group, a 1-ethylpropyl group or a tert-pentyl group.

公开(公告)号：EP4180417A1

公开(公告)日：2023-05-17

申请号：EP21837909.7

申请日：2021-06-25

申请人： ADEKA CORPORATION

发明人： SAKURAI, Atsushi ,  HATASE, Masako ,  OKADA, Nana ,  FUKUSHIMA, Ryota

IPC分类号： C07C215/08 ,  C07F1/08 ,  C07F15/04 ,  C07F15/06 ,  C07F7/22 ,  C23C16/18 ,  C23C16/40

摘要： The present invention provides an alkoxide compound represented by the following general formula (1), a thin-film forming raw material containing the compound, and a method of producing a thin-film:

where R 1 and R 2 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R 3 and R 4 each independently represent an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R 5 represents a hydrogen atom, a fluorine atom-containing group, or an alkyl group having 1 to 5 carbon atoms, R 6 represents a fluorine atom-containing group, M represents a metal atom or a semimetal atom, and "n" represents the valence of the atom represented by M, provided that when M represents a copper atom, R 3 and R 4 each independently represent an alkyl group having 1 or 2 carbon atoms, and R 5 represents a hydrogen atom.

公开(公告)号：EP4434994A1

公开(公告)日：2024-09-25

申请号：EP22895461.6

申请日：2022-11-07

申请人： ADEKA CORPORATION

发明人： FUKUSHIMA, Ryota ,  ENZU, Masaki ,  MITSUI, Chiaki ,  OKADA, Nana ,  HATASE, Masako

IPC分类号： C07F15/00 ,  C23C16/18 ,  H01L21/285

CPC分类号： C23C16/18 ,  C07F15/00 ,  H01L21/285

摘要： Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a ruthenium compound represented by the following general formula (1):

wherein R1 represents a hydrogen atom or a methyl group, and R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.

公开(公告)号：EP3647460A1

公开(公告)日：2020-05-06

申请号：EP18823105.4

申请日：2018-05-17

申请人： Adeka Corporation

发明人： NISHIDA, Akihiro ,  OKADA, Nana ,  OE, Yoshiki

IPC分类号： C23C16/32 ,  C07F17/00 ,  C23C16/18 ,  H01L21/316 ,  C07F7/28

摘要： The present invention provides a raw material for thin film formation which has excellent safety, transportability, and productivity and can be used for a CVD method, a method for manufacturing a thin film using the raw material, and a novel compound used as a raw material for thin film formation.
In order to achieve the above object, the present invention provides a raw material for thin film formation containing a compound represented by the following General Formula (1), a method for manufacturing a thin film using the raw material, and a novel compound represented by General Formula (2) in this specification:

wherein, X represents a halogen atom, and R represents a primary alkyl group or secondary butyl group having 1 to 5 carbon atoms.

公开(公告)号：EP3862462A1

公开(公告)日：2021-08-11

申请号：EP19869747.6

申请日：2019-09-24

申请人： ADEKA CORPORATION

发明人： OKADA, Nana ,  YOSHINO, Tomoharu ,  YAMASHITA, Atsushi

IPC分类号： C23C16/18 ,  C23C16/455 ,  H01L21/365

摘要： The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1):

where R 1 to R 4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A 1 represents an alkanediyl group having 1 to 5 carbon atoms.

公开(公告)号：EP3712159A1

公开(公告)日：2020-09-23

申请号：EP18877651.2

申请日：2018-07-27

申请人： ADEKA CORPORATION

发明人： YOSHINO, Tomoharu ,  ENZU, Masaki ,  OKADA, Nana ,  HATASE, Masako

IPC分类号： C07F15/00 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285

摘要： An object of the present invention is to provide a ruthenium compound having a high vapor pressure and having a lower melting point than conventionally known compounds, a raw material which is for forming a thin film and which contains the compound, and a method of producing a thin film, including a step of forming a thin film that contains ruthenium using the raw material. In order to achieve the above object, a ruthenium compound represented by a general formula described in the specification, a raw material which is for forming a thin film and which contains the ruthenium compound, and a method of producing a thin film using the raw material for forming a thin film are provided.