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14 条记录 (耗时 0.01 秒)

    Picosecond photoresponsive element
    5.
    发明公开
    Picosecond photoresponsive element 失效
    皮秒光敏组分切换。

    公开(公告)号：EP0210379A1

    公开(公告)日：1987-02-04

    申请号：EP86107544.8

    申请日：1986-06-03

    申请人： International Business Machines Corporation

    发明人： Kash, Jeffrey Alan ,  Kuech, Thomas Francis

    IPC分类号： H01L31/08

    CPC分类号： H01L31/184 ,  H01L31/0368 ,  H01L31/08 ,  Y02E10/544 ,  Y10S148/15

    摘要： Picosecond response photoconductors and photoresponsive elements can be provided that retain high carrier mobility and yet have short lifetime by providing on a crystal mismatched substrate (1) a textured layer (2) of domain regions (3) wherein the domain size is such that the lifetime (t) is proportional to the square of the size (S²) divided by the diffusion coefficient (D) of the semiconductor (i.e. t ≈ S²/D) material. The crystalline orientation in the domains with respect to the substrate is maintained. An embodiment is an approximately 0.1 micron thick textured layer of GaAs (2) grown on a hexagonal monocrystalline Al₂O₃ substrate (1) having domains approximately 1.0 micron with a carrier lifetime about 5 picoseconds and a carrier mobility of about 80 cm² volt⁻¹ sec⁻¹.

    A method of making a component for a microelectronic circuit and a semiconductor device and an optical waveguide made by that method
    6.
    发明公开
    A method of making a component for a microelectronic circuit and a semiconductor device and an optical waveguide made by that method 失效
    制造微电子电路的元件和根据该方法，半导体器件和光波导产生的方法。

    公开(公告)号：EP0171226A2

    公开(公告)日：1986-02-12

    申请号：EP85305242.1

    申请日：1985-07-23

    申请人： International Business Machines Corporation

    发明人： Hovel, Harold John ,  Kuech, Thomas Francis

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02244 ,  G02B6/13 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/0331 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/321 ,  H01S5/0205

    摘要： A portion of a first layer (14; 34) exposed through an opening (20; 40) in a second layer (18; 38) is chemically converted to a compound having properties different to those of the first layer.
    By arranging that the conversion to the compound extends beyond the boundary of the opening and removing the compound, further material (24) can be depositied onto the substrate (12) through the opening (201. In this manner, a self-aligned semiconductor device can be formed with the further material (24) serving as the gate of the device.
    If the conversion to the compound is limited to the portion of the first layer directly below the opening (40) and the compound has an index of refraction different from that of the first layer, the converted portion (36) can serve as an optical waveguide.

    摘要翻译： 通过对开口部露出（20; 40）中的第二层;第一层（34 14）的一部分（18; 38）是化学转化为具有与第一层不同的特性的化合物。 通过布置做了转化为化合物延伸的开口并除去化合物的边界之外，另外的材料（24）可以在底材上（12）穿过所述开口（20）被depositied。 以这种方式，以自对准的半导体器件可与作为器件的栅极的另一材料（24）来形成。 如果转换到化合物被限制在正下方的开口（40），所述第一层的所述部分与所述化合物具有上折射不同于做的第一层，所述转换部分（36）中的索引可以作为上光波导 ，

    Metal organic vapor phase epitaxial growth of group III-V compounds
    8.
    发明公开
    Metal organic vapor phase epitaxial growth of group III-V compounds 失效
    Epitaxie von III-V-Gruppen-Verbindungen durch metallorganische Gasphasenabscheidung。

    公开(公告)号：EP0349781A2

    公开(公告)日：1990-01-10

    申请号：EP89110333.5

    申请日：1989-06-08

    申请人： International Business Machines Corporation

    发明人： Kuech, Thomas Francis ,  Tischler, Michael Albert

    IPC分类号： C30B25/02 ,  C30B29/40

    CPC分类号： C30B25/02 ,  C30B29/40

    摘要： A method of depositing III-V compounds like III-V semiconductor materials on a semiconductor substrate comprising the step of:
    introducing at least one organometallic compound containing a Group III metal and at least one compound of a Group V element into a reaction chamber at temperatures and pressures sufficient to epitaxially deposit at least one III-V compound on a substrate, like a semiconductor substrate. The method is further directed to selectively growing III-V compounds on a masked substrate.

    摘要翻译： 一种在半导体衬底上沉积III-V族化合物如III-V族半导体材料的方法，包括以下步骤：将至少一种含有III族金属的有机金属化合物和至少一种V族元素的化合物在温度 以及足以在诸如半导体衬底的衬底上外延沉积至少一种III-V化合物的压力。 该方法进一步涉及在掩蔽的基底上选择性地生长III-V族化合物。