公开(公告)号：EP1286398A4

公开(公告)日：2003-02-26

申请号：EP00976351

申请日：2000-11-20

申请人： MATSUSHITA ELECTRIC IND CO LTD

发明人： YOKOGAWA TOSHIYA ,  KITABATAKE MAKOTO ,  KUSUMOTO OSAMU ,  TAKAHASHI KUNIMASA ,  UENOYAMA TAKESHI

IPC分类号： H01L21/04 ,  H01L29/10 ,  H01L29/24 ,  H01L29/36 ,  H01L29/772 ,  H01L29/78 ,  H01L29/06 ,  H01L29/778

CPC分类号： H01L29/7813 ,  H01L21/0455 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/66068 ,  H01L29/7725 ,  H01L29/78 ,  H01L29/7828 ,  H01L29/7838

摘要： P-type active region 12; n-type source/drain regions 13a and 13b; gate insulating film 14 made of a thermal oxide film; gate electrode 15; source/drain electrodes 16a and 16b, are provided over a p-type SiC substrate 11. In the active region 12, p-type heavily doped layers 12a, which are thin enough to create a quantum effect, and thick undoped layers 12b are alternately stacked. When carriers flow, scattering of impurity ions in the active region is reduced, and the channel mobility increases. In the OFF state, a depletion layer expands throughout the active region, and the breakdown voltage increases. As a result of reduction in charges trapped in the gate insulating film or near the interface between the gate insulating film and the active region, the channel mobility further increases.

摘要翻译： MISFET包括其上设置有p型有源区（12），n型源极区和漏极区（13a，13b），由热氧化物组成的栅极氧化物（14）的p型SiC衬底（11） 栅电极（15），源电极（16a）和漏电极（16b）。 有源区（12）包括足够薄以允许量子效应的重掺杂p型层（12a）和未掺杂厚层（12b）的叠层。 载流子迁移率随着移动载流子存在下有源区中杂质离子的散射减少而增加，而由于截止状态下整个有源区中的耗尽导致击穿强度增加。 沟道迁移率进一步增加，因为较少的电荷被俘获在栅极氧化物中以及栅极氧化物与有源区之间的界面附近。

公开(公告)号：EP1231640A4

公开(公告)日：2008-10-08

申请号：EP01943848

申请日：2001-06-27

申请人： MATSUSHITA ELECTRIC IND CO LTD

发明人： YOKOGAWA TOSHIYA ,  TAKAHASHI KUNIMASA ,  KITABATAKE MAKOTO ,  KUSUMOTO OSAMU ,  UENOYAMA TAKESHI ,  MIYAZAKI KOJI

IPC分类号： H01L27/06 ,  H01L21/82 ,  H01L21/8252 ,  H01L27/04 ,  H01L29/10 ,  H01L29/15 ,  H01L29/24 ,  H01L29/36 ,  H01L29/772 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H03D7/12 ,  H03F3/60

CPC分类号： H01L21/8213 ,  H01L21/8252 ,  H01L27/0629 ,  H01L27/0688 ,  H01L29/105 ,  H01L29/157 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/7725 ,  H01L29/7838 ,  H01L29/812 ,  H01L29/872 ,  Y10S438/931 ,  Y10S438/957

摘要： A first active region (12) comprising highly-doped n-type doped layers (12a) and undoped layers (12b) alternately and a second active region (13) comprising highly-doped p-type doped layers (13a) and undoped layers (13b) alternately are formed in this order from below on an SiC substrate (10). A Schottky diode (20) and a pMOSFET (30) are provided on the first active region (12), and an nMOSFET (40), a capacitor (50), and an inductor (60) are provided on the second active region (13). The Schottky diode (20) and the MOSFETs (30, 40) have a break-down voltage characteristic and a carrier drift characteristic attributed to the multilayer structure of the alternated d-doped layer and undoped layers and are integrated on the same substrate.

摘要翻译： 包括交替地包括高掺杂n型掺杂层（12a）和未掺杂层（12b）的第一有源区（12）以及包括高掺杂p型掺杂层（13a）和未掺杂层（12b）的第二有源区（13） 13b）在SiC衬底（10）上从下方交替地形成。 在第一有源区域12上设置肖特基二极管20和pMOSFET30，在第二有源区域12上设置nMOSFET40，电容器50和电感器60。 13）。 肖特基二极管（20）和MOSFET（30,40）具有归因于交替d掺杂层和未掺杂层的多层结构的击穿电压特性和载流子漂移特性，并被集成在同一衬底上。

公开(公告)号：EP1189287A4

公开(公告)日：2003-05-21

申请号：EP00976350

申请日：2000-11-20

申请人： MATSUSHITA ELECTRIC IND CO LTD

发明人： YOKOGAWA TOSHIYA ,  TAKAHASHI KUNIMASA ,  KUSUMOTO OSAMU ,  KITABATAKE MAKOTO ,  UENOYAMA TAKESHI

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L29/20 ,  H01L29/24 ,  H01L29/36 ,  H01L29/812 ,  H01L29/872 ,  H01L29/778

CPC分类号： H01L29/155 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/365 ,  H01L29/812 ,  H01L29/872

摘要： An active region 30 is formed on a substrate 3, which is made of SiC, GaN, or GaAs, for example, by alternately layering undoped layers 22 with a thickness of for example about 50 nm and n-type doped layers 23 with a thickness (for example, about 10 nm) that is thin enough that quantum effects can be achieved. Carriers spread out into the undoped layers 22 from sub-bands of the n-type doped layers 23 that occur due to quantum effects. In the undoped layers 22, which have a low concentration of impurities, the scattering of impurities is reduced, and therefore a high carrier mobility can be obtained there, and when the entire active region 30 has become depleted, a large withstand voltage value can be obtained due to the undoped layers 22 by taking advantage of the fact that there are no more carriers in the active region 30.

摘要翻译： 厚度为例如约50nm的厚的未掺杂层（22）和足够薄（例如约10nm）以显示量子效应的薄的n型掺杂层（23）在由SiC制成的衬底（3）上交替， GaN或GaAs以形成有源区（30）。 载流子从由n型掺杂层（23）的量子效应产生的子带分布到未掺杂层（22）。 由于在杂质较少的未掺杂层（22）中杂质散射减少，因此可以实现高载流子迁移率。 当整个有源区（30）耗尽时，通过利用载流子从有源区（30）消失的事实，可以通过未掺杂层（22）实现高介电强度。

公开(公告)号：EP0759619A3

公开(公告)日：1998-10-28

申请号：EP96113285

申请日：1996-08-20

申请人： MATSUSHITA ELECTRIC IND CO LTD

发明人： SAKAKIMA HIROSHI ,  UENOYAMA TAKESHI ,  KAWAWAKE YASUHIRO ,  IRIE YOUSUKE

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/14 ,  G11C11/42 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B2005/3996 ,  G11C11/14

摘要： A magnetoresistive effect element having a large magnetoresistive change with a small magnetic field, and a memory element using the same. A semiconductor film 2 to provide a window for excitation light is arranged on a substrate 1 via a buffer layer. Another semiconductor film 3 and a nonmagnetic metallic film (or a nonmagnetic insulating film) 4 are arranged on the semiconductor film 2 successively. A magnetic film 5 having a square magnetization curve is arranged on the nonmagnetic metallic film (or a nonmagnetic insulating film) 4. An electrode 6 is arranged beneath the substrate 1 and another electrode 7 is arranged on the magnetic film 5. By radiating a laser light beam to the semiconductor film acting as a window 2, electrons having spin polarization are excited in the semiconductor film 3 so as to utilize the dependency of the scattering of electrons at the surface of the magnetic film 5 on the magnetization orientation of the magnetic film and the spin polarization state of the excited electrons.